Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

Xiaodan Wang; Yajuan Mo; Xionghui Zeng; Hongmin Mao; Jianfeng Wang; Ke Xu

doi:10.3788/COL201614.051602

Journals >Chinese Optics Letters >Volume 14 >Issue 5 >Page 051602 > Article

Chinese Optics Letters
Vol. 14, Issue 5, 051602 (2016)

Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

Xiaodan Wang^1、*, Yajuan Mo¹, Xionghui Zeng^2、**, Hongmin Mao¹, Jianfeng Wang^2、3, and Ke Xu^2、3

Author Affiliations

¹Department of Physics, Suzhou University of Science and Technology, Suzhou 215009, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

show less

DOI: 10.3788/COL201614.051602 Cite this Article Set citation alerts

Xiaodan Wang, Yajuan Mo, Xionghui Zeng, Hongmin Mao, Jianfeng Wang, Ke Xu. Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation[J]. Chinese Optics Letters, 2016, 14(5): 051602 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Feb. 24, 2023

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.