[1] Gabriel K J. Micro electro mechanical systems [C]Proceedings of the IEEE, 1998, 86 (8): 420457.
[2] Greywall D S. MEMS safety arming devices having launch rotation interlocks method of manufacturing the same: US, US7371982 B2[P]. 20080513.
[3] R H Grace. Application opportunities of mems/mst in the automotive market: The great migration from electromechanical and discrete solutions. Advanced Microsystems for Automotive Applications, 17, 1-16(2001).
[4] T Jo, S Kim, H Pahk. 3D measurement of TSVs using low numerical aperture white-light scanning interferometry. Journal of the Optical Society of Korea, 17, 317-322(2013).
[5] C Hyun, S Kim, H Pahk. Methods to measure the critical dimension of the bottoms of through-silicon vias using white-light scanning interferometry. Journal of the Optical Society of Korea, 18, 531-537(2014).
[6] B Peng, W Hou, Q Xu. Precision 3D profile in-line measurement of through-silicon via (TSV) based on high-frequency spectrum signals in the pupil plane. Optics Communications, 424, 107-112(2018).
[7] J Krauter, W Osten. Nondestructive surface profiling of hidden MEMS using an infrared low-coherence interferometric microscope. Surface Topography: Metrology and Properties, 6, 015001(2018).
[8] J H Shi, B C Han. Internal profile reconstruction of microstructures based on near-infrared light transmission reflection interferometry with optical path compensation. Chinese Optics, 12, 395-404(2019).
[9] J M Bennett. Comparison of instruments for measuring step heights and surface profiles. Applied Optics, 24, 3766-3772(1985).
[10] Potzick J E, Nunn J W. International comparison of photomask linewidth stards: United States (NIST) united kingdom (NPL)[C]Proceedings of SPIE, 1996, 2725: 124129.
[11] Yanan Feng, Suoyin Li, Zhiguo Han, et al. Selection of the etching processes for the fabrication of the micro step height specimens. Micronanoelectronic Technology, 53, 773-778(2016).
[12] M P Seah. CCQM-K32 key comparison and P84 pilot study: Amount of silicon oxide as a thickness of SiO2 on Si. Metrologia, 45, 08013(2008).
[13] S P Gore, A M Funde, T S Salve, et al. Properties of silicon dioxide films prepared using silane and oxygen feeds by PE-CVD at low power plasma. Journal of Nano- and Electronic Physics, 3, 370-375(2011).
[14] Hanssen L M, Wei H C, Lo C W, et al. The design of microscope type spectral reflectometry f the depth measurement of highaspectratio through silicon via[C]Proceedings of SPIE, 2016, 99610: 99610L.
[15] Lihua Lei, Xinyin Zhang, Junjie Wu, et al. Characterization of nanofilm parameters based on hybrid optimization algorithm. Infrared and Laser Engineering, 49, 0213001(2020).
[16] UNEEN ISO 25178702015. Geometrical product specification (GPS) Surface texture: Areal Part 70: Material measures (ISO 2517870: 2014)[S]. Austria: Osterreichisches Nmungsinstitut, 2015.
[17] Bodermann B, Zurbrick L S, Montgomery M W, et al. Results of an international photomask linewidth comparison of NIST PTB[C]Proceedings of SPIE, 2009, 7488: 74881H.
[18] T V Kessel, H K Wickramasinghe. Measurement of trench depth by infrared interferometry. Optics Letters, 24, 1702-1704(1999).
[19] E Lebrasseur, J Pourciel, T Bourouina, et al. A new characterization tool for vertical profile measurement of high-aspect-ratio microstructures. Journal of Micromechanics and Microengineering, 12, 280-285(2002).
