• Infrared and Laser Engineering
  • Vol. 52, Issue 4, 20220646 (2023)
Lin Zhao1, Xiaodong Zhang1, Lihua Lei2,*, Qun Yuan3..., Suoyin Li1, Faguo Liang1 and Aihua Wu1|Show fewer author(s)
Author Affiliations
  • 1Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • 2Shanghai Institute of Measurement and Testing Technology, Shanghai 201203, China
  • 3School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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    DOI: 10.3788/IRLA20220646 Cite this Article
    Lin Zhao, Xiaodong Zhang, Lihua Lei, Qun Yuan, Suoyin Li, Faguo Liang, Aihua Wu. A hybrid high-aspect-ratio trench standard template[J]. Infrared and Laser Engineering, 2023, 52(4): 20220646 Copy Citation Text show less
    Graphic design scheme of standard template
    Fig. 1. Graphic design scheme of standard template
    Process design flow chart of high-aspect-ratio trench standard template
    Fig. 2. Process design flow chart of high-aspect-ratio trench standard template
    Process flow chart of SOI chip processing
    Fig. 3. Process flow chart of SOI chip processing
    (a) Physical map of the standard template; (b) Scribing map of the standard template
    Fig. 4. (a) Physical map of the standard template; (b) Scribing map of the standard template
    Schematic diagram of the characterization position and uniformity assessment of the high-aspect-ratio trench standard template
    Fig. 5. Schematic diagram of the characterization position and uniformity assessment of the high-aspect-ratio trench standard template
    Location map of wafer sample uniformity assessment
    Fig. 6. Location map of wafer sample uniformity assessment
    Definition of groove depth measurement
    Fig. 7. Definition of groove depth measurement
    Measurement result of the standard template sample under SEM
    Fig. 8. Measurement result of the standard template sample under SEM
    Uniformity measurement results of a sample template with a line width of 2 μm and a trench depth of 10 μm
    Fig. 9. Uniformity measurement results of a sample template with a line width of 2 μm and a trench depth of 10 μm
    Uniformity measurement results of a sample template with a line width of 2 μm and a trench depth of 60 μm
    Fig. 10. Uniformity measurement results of a sample template with a line width of 2 μm and a trench depth of 60 μm
    Uniformity measurement results of a sample template with a line width of 30 μm and a trench depth of 200 μm
    Fig. 11. Uniformity measurement results of a sample template with a line width of 30 μm and a trench depth of 200 μm
    Uniformity measurement results of a sample template with a line width of 30 μm and a trench depth of 300 μm
    Fig. 12. Uniformity measurement results of a sample template with a line width of 30 μm and a trench depth of 300 μm
    Measurement results of the 30-300 μm standard sample template in the near-infrared broad-spectrum interference microscopy measurement system
    Fig. 13. Measurement results of the 30-300 μm standard sample template in the near-infrared broad-spectrum interference microscopy measurement system
    Nominal width/μmNominal depth/μmAspect ratio
    3030010∶1
    30200Near 7∶1
    26030∶1
    2105∶1
    Table 1. Nominal size and aspect ratio of design standard template
    Model standard value/μm Characterization results/μm Measurement results/μm Deviation/μm
    Line width21.831.80.03
    Trench depth109.999.90.09
    Line width22.202.30.10
    Trench depth6059.8060.20.40
    Line width3029.6030.71.10
    Trench depth200200.30200.70.40
    Line width3029.6030.81.20
    Trench depth300299.60300.40.80
    Table 2. Comparison of sample template setting results and measurement results
    Lin Zhao, Xiaodong Zhang, Lihua Lei, Qun Yuan, Suoyin Li, Faguo Liang, Aihua Wu. A hybrid high-aspect-ratio trench standard template[J]. Infrared and Laser Engineering, 2023, 52(4): 20220646
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