Accuracy estimation of microwave performance for InP HBTs based on Monte-Carlo analysis

Ke-Jing CAO; Ao ZHANG; Jian-Jun GAO

doi:10.11972/j.issn.1001-9014.2022.02.008

[1] Jian-Jun GAO. Heterojunction Bipolar Transistor for Circuit Design—Microwave modeling and parameter extraction(2015).

[2] Ao ZHANG, Yi-Xin ZHANG, Bo-Ran WANG et al. An approach to determine small-signal model parameters for InP HBT up to 110 GHz. J. Infrared Millim.Waves, 37, 688-692(2018).

[3] Zhong-Chao XU, Jun LIU, Feng QIAN et al. On-wafer test structures modeling for the InP DHBTs in the frequency range of 0.1-325 GHz. J.Infrared Millim.Waves, 38, 345-350(2019).

[4] Y Shiratori, T Hoshi, H Matsuzaki. InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record ft of 813 GHz. IEEE Electron Device Letters, 41, 697-700(2020).

[5] Ao ZHANG, Jian-Jun GAO. An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor. International Journal of Numerical Modelling Electronic Networks Devices and Fields, 33, 1-11(2019).

[6] L Kolev. Worst-case tolerance analysis of linear DC and AC electric circuits. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 49, 1693-1701(2002).

[7] Zhi-Kai CHEN, Yue-Hang XU, Chang-Si WANG et al. A Large-Signal Statistical Model and Yield Estimation of GaN HEMTs Based on Response Surface Methodology. IEEE Microwave and Wireless Components Letters, 26, 690-692(2016).

[8] V Teppati, A Ferrero. A Comparison of Uncertainty Evaluation Methods for On-Wafer S-Parameter Measurements. IEEE Transactions on Instrumentation and Measurement, 63, 935-942(2014).

[9] V Teppati, S Tirelli, R Lövblom et al. Accuracy of Microwave Transistor fT and fMAX Extractions. IEEE Transactions on Electron Devices, 61, 984-990(2014).

[10] S M Masood, T K Johansen, J Vidkjaer et al. Uncertainty Estimation in SiGe HBT Small-Signal Modeling: European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 393-396(2005).

[11] Ke-Jing CAO, Ao ZHANG, Jian-Jun GAO. Sensitivity analysis and uncertainty estimation in small‐signal modeling for InP HBT. Int J Numer Model El, 1-11(2020).

[12] Wei SUN, R CHEN. M.M.; JIANG Yao-Lin. Tolerance analysis for electronic circuit design using the method of moments: 2002 IEEE International Symposium on Circuits and Systems, Proceedings (Cat. No. 02CH37353), 2002, I-I(2002).

[13] Jian-Jun GAO, Xiu-Ping LI, Hong WANG et al. Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs. IEEE Proceedings - Circuits, Devices and Systems, 152, 661-666(2005).

[14] D Lieber, A Nemirovskii, R Y Rubinstein. A fast Monte Carlo method for evaluating reliability indexes. A fast Monte Carlo method for evaluating reliability indexes, 48, 256-261(1999).

[15] E Mairiaux, L Desplanque, X Wallart et al. Microwave Performance of InAlAsSb /In0.35Ga0.65Sb /InAlAsSb Double Heterojunction Bipolar Transistors. IEEE Electron Device Letters, 31, 299-301(2010).

[16] H Gummel. On the definition of the cutoff frequency fT. Proc. IEEE, 57, 2159-2162(1969).

[17] C R Bolognesi, N Matine, M W Dvorak et al. InP/GaAsSb/InP DHBTs with high fT and fMAX for wireless communication applications: Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 21st Annual, 1999, 63-66(1999).