• Journal of Infrared and Millimeter Waves
  • Vol. 24, Issue 3, 193 (2005)
[in Chinese]*, [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. INVESTIGATIONS ON OPTICAL PROPERTIES OF AlGaInN EPILAYERS GROWN BY MOCVD[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 193 Copy Citation Text show less
    References

    [1] Chen C H, Huang L Y, Chen Y F, et al. Mechanism of enhanced luminescence in In xAl yGal-x-yN quaternary alloys [J], Appl. Phys. Lett. , 2002, 80: 1397-1399.

    [2] Liu J P, Wang Y T, Yang H, et al. Investigations on V-defects in quaternary AlInGaN epilayers [J], Appl. Phys.Lett. 2004, 84: 5449-5451.

    [3] Chen Y, Takeuchi T, Amano H, et al. Pit formation in GaInN quantum wells [J]. Appl. Phys. Lett. 1998, 72:710-712.

    [4] Wu X H, Elsass C R, Abare A, et al. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells [J]. Appl. Phys.Lett. , 1998, 72: 692-694.

    [5] Srinivasan S, Geng L, Liu R, et al. Slip systems and misfit dislocations in InGaN epilayers [J]. Appl. Phys. Lett.,2003, 83: 5187-5189.

    [7] Yoshikawa M, Wagner J, Obloh H, et al. Resonant Raman scattering from buried AlxGa1 -xN(x≤0.17) layers in (Al,Ga, In) N heterostructures [J], J. Appl. Phys. 2000,87: 2853-2855.

    [8] Mowbray D J, Cardona M, Ploog K. Multiphonon resonant Raman scattering in short-period GaAs/AlAs superlattices [J]. Phys. Rev. B, 1991,43: 11815-11824.

    [in Chinese], [in Chinese], [in Chinese]. INVESTIGATIONS ON OPTICAL PROPERTIES OF AlGaInN EPILAYERS GROWN BY MOCVD[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 193
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