Author Affiliations
1College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan , Shanxi 030024, China2The Interdisciplinary Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, Chinashow less
Fig. 1. Formation mechanisms and structure diagrams for AAO formation based on different models. (a) Field-induced steady-state pore model
[19]; (b) critical current density model
[22]; (c) expansion of aluminum model
[24]; (d) structural diagram of porous AAO film
Fig. 2. Schematic of AAO template preparation. (a) Schematic for preparation of ultrathin through-hole AAO template by two-step anodization methods; (b) schematic for preparation of through-hole AAO template by nanoimprinting
Fig. 3. Schematic for fabricating different nanoparticle with through-hole AAO masks
Fig. 4. Schematic for preparation of different nanowire arrays by through-hole AAO template
Fig. 5. Schematic for preparation of different nanotube arrays by through-hole AAO template
Fig. 6. Solar cells based on AAO template. (a) Anti-reflection principle diagram of AAO nano-grating
[84]; (b) comparison of absorption spectra of solar cells with and without nanoparticles
[89]; (c) schematic of CdSe nanorods/P3HT solar cell device
[94; (d) EQE spectra of the nanorod array devices and the planer structure devices
[96]; (e) transient photovoltage decay curves for the nanopillar and planar perovskite-based solar cells
[101]; (f) schematic of charge collection with different electron contact in solar cells
[104] Fig. 7. Photodetector based on AAO template. (a) Schematic of the photodetector based on FAPbI
3 nanowires embedded in the AAO
[116]; (b) Ⅳ curves of the FAPbI
3 nanowires
[116]; (c) response time of the FAPbI
3 nanowires photodetector
[116]; (d) mechanism of charge separation and photoresponse activity over CdS/PPV hybrid nanowire arrays
[122]; (e) spectral response of the CdS/PPV hybrid nanowire array device
[122]; (f) responsivity measurement of the ZnO/NiO composite based photodetector
[123]; (g) response spectra of diamond photodetectors with and without Pd
[126]; (h) schematic fabrication of the photodetectors based on hybrid plasmonic nanostructure
[49]; (i) schematic of the Ge nanodots array/graphene/SiO
2/Si photodetector
[127] Fig. 8. LED based on AAO template. (a) Photonic crystal structures on the surfaces of GaN-based LED
[134]; (b) PL spectra of nanostructured LEDs of different depths
[135]; (c) voltage-current-light output curves of conventional LEDs and surface patterned LEDs
[136]; (d) device structure of LED based on nanocomb-shaped PSS
[139]; (e) light racing schematic diagram of BP-LED and HP-LED
[140]; (f) far-field radiation patterns of BP-LED and HP-LED
[140]; (g) UV-Visible absorption spectra of the CsPbI
3 nanowire films at different storage times
[141]; (h) structure diagram of perovskite nanowire LED device
[142]; (i) mechanical robustness test of nanowire and thin film devices after certain bending cycles
[142] Device structure | Response time /ms | Recovery time /ms | Detectivity/Jones | Wavelength /nm | Bias voltage /V | Reference |
---|
ITO/MAPbI3 nanowire array/Au | 20.47 | 13.81 | 1.00×1010 | | 0.3 | [118] | ITO/CsPbI3 nanowire array/Au | 292.00 | 234.00 | 1.57×108 | | 5.0 | [115] | Al/CH3NH3SnI3 nanowire array/Au | 1500.00 | 400.00 | 8.80×1010 | | 2.0 | [119] | ITO/FAPbI3 nanowire array/Al | 8.50 | 9.50 | 2.00×1011-5.00×1011 | 450 | 7.0 | [116] | ITO/MAPbI3 quantum wires/Al | 80.00 | 140.00 | - | | -5.0 | [120] |
|
Table 1. Performance of perovskite nanowire photodetectors based on through-hole AAO template
Nanostructure | Technology | Current /mA | Light output power improved /% | Reference |
---|
GaN nanohole | ICP | 20 | 11.3 | [135] | SiO2 nanohole | ICP | 20 | 19.0 | [136] | ITO+GaN nanohole | ICP | 20 | 49.7 | [133] | SiO2+ITO nanohole | ICP | 350 | 7.0 | [128] | ITO+GaN nanohole | RIE | 20 | 94.0 | [134] | ITO nanohole | ICP-RIE | 20 | 72.0 | [132] |
|
Table 2. Performance of LED devices with surface nanostructures prepared by AAO mask