• Acta Optica Sinica
  • Vol. 40, Issue 22, 2216001 (2020)
Bin Shen*, Huai Xiong, Xu Zhang, and Haiyuan Li
Author Affiliations
  • Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • show less
    DOI: 10.3788/AOS202040.2216001 Cite this Article Set citation alerts
    Bin Shen, Huai Xiong, Xu Zhang, Haiyuan Li. Porous Silica Antireflective Film at Ultraviolet Laser Wavelength (266 nm)[J]. Acta Optica Sinica, 2020, 40(22): 2216001 Copy Citation Text show less
    Particle size distributions of SiO2 in sol with different concentrations
    Fig. 1. Particle size distributions of SiO2 in sol with different concentrations
    Optical properties of fourth harmonic generation SiO2 antireflective films. (a) Transmittance curves; (b) transmittance values at 266 nm
    Fig. 2. Optical properties of fourth harmonic generation SiO2 antireflective films. (a) Transmittance curves; (b) transmittance values at 266 nm
    Refractive index of fourth harmonic generation SiO2 antireflective films
    Fig. 3. Refractive index of fourth harmonic generation SiO2 antireflective films
    Surface roughness (root-mean-square) of fourth harmonic generation SiO2 antireflective films
    Fig. 4. Surface roughness (root-mean-square) of fourth harmonic generation SiO2 antireflective films
    Schematic of laser damage resistance of sol-gel SiO2 film
    Fig. 5. Schematic of laser damage resistance of sol-gel SiO2 film
    Scanning electron micrograph of 1# film surface
    Fig. 6. Scanning electron micrograph of 1# film surface
    Laser damage test of fourth harmonic generation SiO2 antireflective films. (a) Laser-induced damage threshold; (b) damage morphology of 1# film
    Fig. 7. Laser damage test of fourth harmonic generation SiO2 antireflective films. (a) Laser-induced damage threshold; (b) damage morphology of 1# film
    Properties of fourth harmonic generation SiO2 antireflective films in high humidity environment. (a) Transmittance change at 266 nm; (b) contact angle change
    Fig. 8. Properties of fourth harmonic generation SiO2 antireflective films in high humidity environment. (a) Transmittance change at 266 nm; (b) contact angle change
    SiO2 solViscosity /(MPa·s)Dip coating speed /(cm·min-1)Surface tension /(mN·m-1)Density /(g·cm-3)Calculated thickness of wet coating /nmMeasured thickness of dry coating /nm
    1#1.4084.522.600.8000207954.559
    2#1.3965.522.570.7974237052.817
    3#1.375722.850.7957275054.922
    4#1.3638.522.690.7944312052.047
    5#1.3451022.850.7935344052.396
    Table 1. Thickness of the film prepared in SiO2 sol with different concentrations
    Bin Shen, Huai Xiong, Xu Zhang, Haiyuan Li. Porous Silica Antireflective Film at Ultraviolet Laser Wavelength (266 nm)[J]. Acta Optica Sinica, 2020, 40(22): 2216001
    Download Citation