Author Affiliations
Shaanxi Key Laboratory of Artificially-Structured Functional Materials and Devices, Air Force Engineering University, Xi’an 710051, Chinashow less
Fig. 1. Topology and dimensions of the proposed metamaterial absorber. (a) Three-dimensional perspective. (b) Top square meander loop embedded with lumped resistors (E1). (c) Middle bent metallic strips embedded with lumped resistors (E2). P=10 mm, l1=8.5 mm, w1=1 mm, l2=0.85 mm, w2=0.1 mm, l3=4 mm, w3=1 mm, w4=0.5 mm, hs1=0.72 mm, hs2=0.79 mm, ha1=3.8 mm, and ha2=1.5 mm.
Fig. 2. Properties of substrate.
Fig. 3. Modal currents and modal radiation patterns. (a) and (b) Element 1 without lumped resistors and meander lines. (c) and (d) Element 2 without resistors.
Fig. 4. Modal significances: (a) Element 1 and (b) Element 2 without resistors. Characteristic angles: (c) Element 1 and (d) Element 2 without resistors.
Fig. 5. Modal significances: (a) Element 1 and (b) Element 2 with resistors. Characteristic angles: (c) Element 1 and (d) Element 2 with resistors.
Fig. 6. MWC of Element 1 and Element 2 without resistors at oblique angle of incidence. Element 1 under (a) TE and (c) TM polarization. Element 2 under (b) TE and (d) TM polarization.
Fig. 7. (a) Equivalent circuit of the proposed absorber. (b) Reflection coefficient of simulation and equivalent circuit model. (c) Admittance Smith chart.
Fig. 8. Simulated absorption variation with incidence angle, for (a) TE and (b) TM polarizations. RCS reduction between the proposed absorber and ground, for (c) TE and (d) TM polarizations.
Fig. 9. Fabricated prototypes of absorber array. (a) 3D perspective. (b) Measurement environment. (c) Top layer. (d) Middle layer.
Fig. 10. Simulated and measured absorption for (a) TE polarization and (b) TM polarization.
Reference | 90% Absorption Bandwidth (GHz) | Thickness ()a | Polarization | Angle Absorption | Physical Approach to Absorption | CMA |
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[15] | 2.68–12.19 (127.9%) | 0.08 | Dual | 30° (90%) | Lumped resistors | No | [18] | 2.24–11.40 (134.3%) | 0.075 | Dual | 30° (83%) | Lumped resistors | No | [19] | 5.51–36.56 (147.6%) | 0.117 | Dual | 40° (80%) | Indium tin oxide | Yes | [26] | 2.3–13.3 (144.0%) | 0.138 | Dual | 45° (90%) | Dual-section step-impedance | No | [27] | 1.08–5.9 (137.1%) | 0.113 | Dual | 45° (90%) | Wide-angle impedance matching | No | [37] | 1–4.5 (127.3%) | 0.0883 | Dual | N.A. | Resistive film | Yes | [38] | 3.21–14.35 (126.88%) | 0.098 | Dual | 45° (85%) | Resistive film | Yes | Proposed | 4.3–26.5 (144.1%) | 0.097 | Dual | 45° (90%) | Lumped resistors | Yes |
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Table 1. Performance Comparison between the Proposed and Reported Absorbers