• Microelectronics
  • Vol. 52, Issue 3, 473 (2022)
SUN Haonan, WANG Junchao, LI Haoliang, YANG Xiaonan, and ZHANG Yingtao
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210141 Cite this Article
    SUN Haonan, WANG Junchao, LI Haoliang, YANG Xiaonan, ZHANG Yingtao. A Dual Direction LDMOS_SCR for High Voltage ESD Protection Device[J]. Microelectronics, 2022, 52(3): 473 Copy Citation Text show less
    References

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    [4] PAN H W, LIU S Y, SUN W F. A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp [J]. J Semicond, 2013(1): 53-57.

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    [10] WANG Y, JIN X, LIU Y, et al. Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection [J]. Microelec Reliab, 2015, 55(3-4): 520-526.

    [11] LIANG H, CAO H, GU X, et al. Design and optimization of LDMOS-SCR devices with improved ESD protection performance [J]. Microelec Reliab, 2016, 61(6): 115-119.

    [12] CHEN Z, LU W, WU M, et al. A compact LDMOS DDSCR for HV ESD protections with high robustness and reliability [J]. Sol Sta Elec, 2019, 161(11): 1076401-1076406.

    [13] JIN X L, ZHENG Y F, WANG Y, et al. Design and analysis of LDMOS_SCR with narrow windows [C]// IEEE 24th IPFA. Chengdu, China. 2017: 1-4.

    SUN Haonan, WANG Junchao, LI Haoliang, YANG Xiaonan, ZHANG Yingtao. A Dual Direction LDMOS_SCR for High Voltage ESD Protection Device[J]. Microelectronics, 2022, 52(3): 473
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