The lateral double diffused MOSFET silicon controlled rectifiers(LDMOS_SCR) device structure was commonly used for electrostatic protection at high voltage due to excellent high voltage characteristics. The N+ of the floating drain pole was divided into symmetric P+, N+ and P+ structures, and a dual directional protection of power device based on LDMOS_SCR with low trigger and high holding voltage was proposed. It reduced the emitter-injection efficiency of parasitic bipolar transistors formed at the bottom of the grid region, and the inherent positive feedback mechanism of the SCR was reduced. Based on TCAD simulation, the experimental results showed that, compared with the traditional LDMOS_DDSCR, the trigger voltage of the new device was reduced from 69.6 V to 48.5 V, and the holding voltage was increased from 14.9 V to 17 V. It was proved that the new structure had a good immunity ability of latch-up effect compared with the traditional LDMOS_DDSCR device.