[1] R Schaller. Moore's law: past, present, and future. IEEE Spectrum, 34, 52(1997).
[2] B Vigna. More than Moore: micro-machined products enable new applications and open new markets. International Electron Devices Meeting, 1(2005).
[3] J B Cheng, S S Chen, L Tian. A new SCR-LDMOSFET embedded p- region for electrostatic discharge protection. IEEE International Power Electronics and Application Conference and Exposition, 1(2018).
[4] Q Qian, W Sun, S Wei et al. The investigation of electrothermal characteristics of high-voltage lateral IGBT for ESD protection. IEEE Trans Device Mater Reliab, 12, 146(2012).
[5] H Arbess, D Tremouilles, M Bafleur. High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power SOI technology. Electrical Overstress electrostatic Discharge Symposium, 1(2011).
[6] J Wu, S Dong, Y Han et al. Lateral IGBT in thin SOI process for high voltage ESD application. IEEE International Conference on Electron Devices and Solid-State Circuit, 1(2012).
[7] L Jiang, H Fan, M Qiao et al. ESD characterization of a 190 V LIGBT SOI ESD power clamp structure for plasma display panel applications. Microelectron Reliab, 53, 687(2013).
[8] Q Qian, S Liu, W Sun et al. A robust W-shape-buffer LIGBT device with large current capability. IEEE Trans Power Electron, 29, 4466(2014).
[9] J Zeng, S Dong, J J Liou et al. Design and analysis of an area-efficient high holding voltage ESD protection device. IEEE Trans Electron Devices, 62, 606(2015).
[10] R Ye, S Liu, W Sun et al. ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures. Solid State Electron, 137, 6(2017).
[11] R Ye, S Liu, Y Tian et al. Influence of latch-up immunity structure on ESD robustness of SOI-LIGBT used as output device. IEEE Trans Device Mater Reliab, 18, 284(2018).