• Infrared and Laser Engineering
  • Vol. 50, Issue 1, 20211015 (2021)
Zhaoguo Liu, Huanli Zhou, Weidi He, Ning Zhao, and Tong Zhang
Author Affiliations
  • Joint International Research Laboratory of Information Display and Visualization, School of Electronics Science and Engineering, Southeast University, Nanjing 210096, China
  • show less
    DOI: 10.3788/IRLA20211015 Cite this Article
    Zhaoguo Liu, Huanli Zhou, Weidi He, Ning Zhao, Tong Zhang. Development of terahertz detectors with low dimensional materials (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211015 Copy Citation Text show less
    [in Chinese]
    Fig. 1. [in Chinese]
    [in Chinese]
    Fig. 2. [in Chinese]
    [in Chinese]
    Fig. 3. [in Chinese]
    [in Chinese]
    Fig. 4. [in Chinese]
    [in Chinese]
    Fig. 5. [in Chinese]
    MechanismMaterialFrequencyResponsivityResponse timeNEPRef.
    BolometerGraphene2 THz8 nA/W50 ps[22]
    BolometerGraphene0.15 THz1×1010 V/W <2.5 ns0.2 fW/Hz1/2[23]
    BolometerBP0.3 THz7.8 V/W<1 ms4 nW/Hz1/2[25]
    PTEGraphene2.52 THz>10 V/W110 ps1.1 nW/Hz1/2[29]
    PTEGraphene2.52 THz8.4 mV/W5 μs[30]
    PTEBP0.3 THz0.9 mV/W20 ps[31]
    Plasma wave rectificationMoSe20.29 THz38 mV/W6.6×10-6 W/Hz1/2[36]
    Plasma wave rectificationGraphene0.6 THz14 V/W<30 μs515 pW/Hz1/2[37]
    Plasma wave rectificationGraphene0.3 THz1.2 V/W<2.5 ms2 nW/Hz1/2[38]
    Plasma wave rectificationBP0.26-0.38 THz0.15 V/W40 nW/Hz1/2[39]
    Plasma wave rectificationGraphene0.23-0.375 THz0.25 V/W<1.2 ms80 nW/Hz1/2[42]
    Hot carrier-assistedBi2Se30.3 THz>10 V/W60 μs0.36 pW/Hz1/2[46]
    Hot carrier-assistedBP0.15 THz300 V/W4 μs1 nW/Hz1/2[47]
    Hot carrier-assistedTaSe20.3 THz40 A/W<1 pW/Hz1/2[48]
    Table 1. [in Chinese]
    Zhaoguo Liu, Huanli Zhou, Weidi He, Ning Zhao, Tong Zhang. Development of terahertz detectors with low dimensional materials (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211015
    Download Citation