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    Journals >Journal of Semiconductors >Volume 44 >Issue 10 >Page 102301 > Article
    • Journal of Semiconductors
    • Vol. 44, Issue 10, 102301 (2023)
    The measurement of responsivity of infrared photodetectors using a cavity blackbody
    Nong Li1、2, Dongwei Jiang1、2、3、*, Guowei Wang1、2、3, Weiqiang Chen1、2, Wenguang Zhou1、2, Junkai Jiang1、2, Faran Chang1, Hongyue Hao1、2、3, Donghai Wu1、2、3, Yingqiang Xu1、2、3, Guiying Shen4, Hui Xie4, Jingming Liu4, Youwen Zhao4, Fenghua Wang4, and Zhichuan Niu1、2、3、**
    Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
  • 3Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.1088/1674-4926/44/10/102301 Cite this Article
    Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu. The measurement of responsivity of infrared photodetectors using a cavity blackbody[J]. Journal of Semiconductors, 2023, 44(10): 102301 Copy Citation Text show less
    References

    [1] R Clark Jones. ‘Detectivity’: The reciprocal of noise equivalent input of radiation. Nature, 170, 937(1952).

    [2] R Clark Jones. Phenomenological description of the response and detecting ability of radiation detectors. Proc IRE, 47, 1495(1959).

    [3] E H Aifer, J G Tischler, J H Warner et al. W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency. Appl Phys Lett, 89, 053519(2006).

    [4] B M Nguyen, D Hoffman, Y J Wei et al. Appl Phys Lett, 90, 231108(2007).

    [5] I Shafir, N Snapi, D Cohen-Elias et al. High responsivity InGaAsSb p–n photodetector for extended SWIR detection. Appl Phys Lett, 118, 063503(2021).

    [6] N Li, W Q Chen, D N Zheng et al. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection. Infrared Phys Technol, 111, 103461(2020).

    [7] C A Wang, H K Choi, S L Ransom et al. High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices. Appl Phys Lett, 75, 1305(1999).

    [8] D Cohen-Elias, N Snapi, O Klin et al. Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode. Appl Phys Lett, 111, 201106(2017).

    [9] G W Charache, P F Baldasaro, L R Danielson et al. InGaAsSb thermophotovoltaic diode: Physics evaluation. J Appl Phys, 85, 2247(1999).

    [10] D Hoffman, B M Nguyen, P Y Delaunay et al. Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes. Appl Phys Lett, 91, 143507(2007).

    [11] D Z Y Ting, C J Hill, A Soibel et al. A high-performance long wavelength superlattice complementary barrier infrared detector. Appl Phys Lett, 95, 023508(2009).

    [12] R Rehm, M Walther, J Schmitz et al. InAs/GaSb superlattices for advanced infrared focal plane arrays. Infrared Phys Technol, 52, 344(2009).

    [13] H S Kim, E Plis, J B Rodriguez et al. Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design. Appl Phys Lett, 92, 183502(2008).

    [14] J P Prineas, J Yager, S Seyedmohamadi et al. J Appl Phys, 103, 104511(2008).

    [15] H Shao, A Torfi, W Li et al. J Cryst Growth, 311, 1893(2009).

    [16] J D Vincent, S Hodges, J Vampola et al. Fundamentals of infrared and visible detector operation and testing(2015).

    [17] N Li, J Sun, Q X Jia et al. High performance nBn detectors based on InGaAsSb bulk materials for short wavelength infrared detection. AIP Adv, 9, 105106(2019).

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    Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu. The measurement of responsivity of infrared photodetectors using a cavity blackbody[J]. Journal of Semiconductors, 2023, 44(10): 102301
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