Fig. 1. Infrared detectors with micro-holes on silicon substrates
[19-21]; (a) Schematic diagram of Si-Ge optoelectronic device with micro-hole array structures
[19]; (b) External quantum efficiency enhancement coefficient and responsivity in the 1 200-1 800 nm band of the Si-Ge device
[19];(c) Schematic diagram of a silicon single-photon avalanche detector with micro-hole array structures
[20]; (d) External quantum efficiency of devices of different sizes
[20]; (e) Schematic diagram of conformal graphene/silicon nanopore detector
[21] ; (f) Photoelectric response of silicon nanopore, graphene/silicon and conformal graphene/silicon nanopore detectors
[21] Fig. 2. (a) A schematic diagram of a silicon photodiode integrated with a micro-holes
[22]; (b) SEM images of holes of different shapes integrated in the photodiode, including square holes, hexagonal holes, cylindrical and funnel shapes
[22]; (c) Scanning electron microscope picture of the active area of the photodiode
[22]; (d) A schematic diagram of a silicon photodetector with integrated micro structures
[23]; (e) Top and cross-sectional views of the funnel-shaped and inverted pyramid-shaped light trapping structures
[23]; (f) Relationship between the external quantum efficiency and the number of nano-holes
[23] Fig. 2. [in Chinese]
Fig. 3. Mid-wave infrared detector samples of HgCdTe with microstructures of different filling factors
[24] Fig. 4. Structure and photoelectric characteristics of different types of nanorods near infrared photodetectors
[26-29]. (a)
I-
V curve of the SiNW/Au/Graphene detector and the device structure
[26]; (b) Schematic diagram of the silicon nanowire array/perovskite photodetector(cross-sectional view and 850 nm incident light time response curve under zero bias)
[27]; (c) Schematic diagram of PbSe
2/GeNcs array heterojunction photodetector(cross-sectional SEM image of germanium nanocone array and
I-
V curve diagram)
[28]; (d) Schematic diagram of the ZnO/MoS
2detector(SEM images and time-current response)
[29] Fig. 5. Structures and performances of enhanced infrared detectors with different types of surface metal microstructures
[34-37]. (a) Structure diagram of the aysmmetric infrared plasma detector(SEM image and electric field intensity enhancement coefficient)
[34] ; (b) Schematic diagram of the two-color infrared detector with cross stars(SEM image and reflection curve)
[35];(c) Schematic diagram of the square-hole plasma long-wave infrared detector(SEM image and curve of absorption enhancement factor)
[36]; (d) Schematic diagram of the plasma cavity quantum well infrared detector(SEM image and absorption enhancement spectrum)
[37] Fig. 6. Structures and performance of several types of hot-electron infrared detectors with metal meta-surface
[43-46]. (a) Structure diagram, SEM image and photoelectrical properties of local plasmon thermal electron injection photodetector
[43]; (b) Structure diagram and quantum efficiency curve of plasmon thermoelectron photodetector based on surface plasma
[44]; (c) Schematic diagram and spectral response of all-silicon thermoelectronic photodetector
[45]; (d) Structure diagram and absorption curve of a wide band thermo-electron photodetector
[46] Fig. 7. Structures and performance of several types of 3D plasmonic cavity enhanced infrared detectors with micro-structure
[50-53] Fig. 8. Structures and performance of plasmonic cavity enhanced 2D materials infrared detectors with micro-structure
[54-56]. (a) Schematic diagram of plasma cavity structure and absorption curve of graphene
[54]; (b) Schematic diagram and absorption curve of hybrid grating Fabry-Perot structure integrated with graphene film
[55]; (c) Schematic diagram of gold nanostructure plasmonic cavity and absorption curve of black phosphorus
[56] Fig. 9. Structures and performance of three kinds of heavily doped semiconducting plasma detectors
[61-63]. (a) Structures of heavily doped plasmonic detector, distribution of electrical field and curve of EQE
[61]; (b) Schematic diagram of ultra-thin enhanced absorption long-wave infrared detector(band-structure schematics and the absorption curve)
[62] ; (c) Schematic diagram of a single-cycle GMR detector (Scanning electron micrographs and detectability curves of cross-sections)
[63] Fig. 9. [in Chinese]
Structure type | Principle | Wavelength
/μm
| Responsivity/(A/W) | D*/cm·Hz1/2·W−1 | Dielectric
| Silicon substrate | Increasing the effective propagation path by multiple reflections and scatterings | 0.8-1.8[19-23] | 0.91[19] | 1.25×1011 [21] | HgCdTe | 1-5[24] | 1-2[24] | NETD:50 mK[24] | Nanowires | 1-1.65[26] | 1.5[26] | 2.52×1014 [26] | Surface metal
| Meta-surface | SPP and LSP are excited at resonant wavelength to improve optical field density and enhance the absorption; | 3-12[34-37] | 7 [37] | 7.4×1010 [37] | LSP hot electrons | 1.2~1.6[43] | 8×10-6[43] | 2.4×107 [46] | SPP hot electrons | 0.8-1.6[45] | 9×10-2[45] | 4.38 ×1011[45] | 3D plasma cavity
| Semi-conductor cavity | Strong local enhancement and near-field coupling effect in the absorption layer of multi-layer cavity
| 4-11[51] | 2[51] | 6.06 ×1010[51] | Quantum well cavity | 11-14[52] | 0.6[52] | 8.52 ×109[52] | 2D material cavity | 3-14[54-56] | 0.32[55] | —— |
|
Table 1. Classification and progress of micro-nano structure enhanced infrared detectors