• Laser & Optoelectronics Progress
  • Vol. 54, Issue 5, 52302 (2017)
Zheng Yuanyu*
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/lop54.052302 Cite this Article Set citation alerts
    Zheng Yuanyu. Study on Aging Properties of AlGaInP Light Emitting Diode[J]. Laser & Optoelectronics Progress, 2017, 54(5): 52302 Copy Citation Text show less
    References

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    [2] Song Pengcheng, Wen Shangsheng, Shang Jun, et al. A dimming method for RGB LED based on three channels′PWM[J]. Acta Optica Sinica, 2015, 35(2): 0223001.

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    [8] Altieri-Weimar P, Jaeger A, Lutz T, et al. Influence of doping on the reliability of AlGaInP LEDs[J]. Journal of Materials Science, 2008, 19(1): 338-341.

    [9] Liu Y J, Yen C H, Yu C H, et al. Characteristics of an AlGaInP-based light emitting diode with an indium-tin-oxide (ITO) direct ohmic contact structure[J]. IEEE Journal of Quantum Electronics, 2010, 46(2): 246-252.

    [10] Gao Wei. Study of substrate transfer and reliability of AlGaInP LED[D]. Beijing: Beijing University of Technology, 2011.

    [11] Wang Haiyan, Zhang Yating, Jin Lufan, et al. Acceleration aging study of amplified spontaneous emission broadband source[J]. Chinese J Lasers, 2015, 42(4): 0405003.

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    [13] Hsu S C, Wuu D S, Zheng X, et al. High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer[J]. Japanese Journal of Applied Physics, 2008, 47(9): 7023-7025.

    Zheng Yuanyu. Study on Aging Properties of AlGaInP Light Emitting Diode[J]. Laser & Optoelectronics Progress, 2017, 54(5): 52302
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