A chip with an area of less than 12 mil×12 mil (300 μm×300 μm, 1 mil=25.4 μm) is fabricated using a metal organic chemical vapor deposition system epitaxial AlGaInP light emitting diode. The chip is packaged in a bare crystal structure and accelerated at 50 mA, 50 ℃ condition for 1008 h aging experiment. The purpose of the experiment is to investigate the effects of distributed Bragg reflectors (DBR) and segmented doped P-type layers on the aging properties of small-sized chips with different doping concentrations in epitaxial structures. Results show that as the chip size shrinks, the light attenuation becomes larger. Increasing DBR doping concentration can significantly reduce the light attenuation when the chip size is less than 9 mil×9 mil (225 μm×225 μm). In addition, segmented doped P-cladding are prepared by reducing the doping concentration between the P-Al0.5In0.5P layer and transition layer, and reducing the second P-Al0.5In0.5P doping concentration can further enhance the aging properties. The light attenuation can be controlled within -6% for the aging experiment under the 50 mA constant current at 50 ℃ to 1008 h with chip size of 6 mil×6 mil (150 μm×150 μm).