• Journal of Infrared and Millimeter Waves
  • Vol. 43, Issue 1, 7 (2024)
Jia-Ping SU1、2, Xiao-Hao ZHOU2, Zhou TANG2, Liu-Yan FAN2, Shun-Ji XIA2, Ping-Ping CHEN2、**, and Ze-Zhong CHEN1、*
Author Affiliations
  • 1School of Materials and Chemistry,University of Shanghai for Science and Technology,shanghai 200093,China
  • 2State Key Laboratories of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences Shanghai200083,China
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    DOI: 10.11972/j.issn.1001-9014.2024.01.002 Cite this Article
    Jia-Ping SU, Xiao-Hao ZHOU, Zhou TANG, Liu-Yan FAN, Shun-Ji XIA, Ping-Ping CHEN, Ze-Zhong CHEN. Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 7 Copy Citation Text show less
    The distributions of doping concentration and barrier width of each quantum wells for the NUQWIP
    Fig. 1. The distributions of doping concentration and barrier width of each quantum wells for the NUQWIP
    The measured high resolution transmission electron microscope(HRTEM)of sample A.
    Fig. 2. The measured high resolution transmission electron microscope(HRTEM)of sample A.
    Energy Spectrometer image of sample A.
    Fig. 3. Energy Spectrometer image of sample A.
    The test results of SIMS for sample A
    Fig. 4. The test results of SIMS for sample A
    The dependence of dark current on bias voltage at different temperatures,the solid line is NUQWIP,and the dotted line is a conventional QWIP
    Fig. 5. The dependence of dark current on bias voltage at different temperatures,the solid line is NUQWIP,and the dotted line is a conventional QWIP
    Photocurrent response spectra of NUQWIP and Conventional QWIP at 50K.
    Fig. 6. Photocurrent response spectra of NUQWIP and Conventional QWIP at 50K.
    Relationship between blackbody responsiveness and bias voltage in Non-uniform QWIP and Conventional QWIP at different temperatures.
    Fig. 7. Relationship between blackbody responsiveness and bias voltage in Non-uniform QWIP and Conventional QWIP at different temperatures.
    Photocurrent response spectra of samples A,B,and C at 50K
    Fig. 8. Photocurrent response spectra of samples A,B,and C at 50K
    The dependence of dark current on bias voltage of sample A,sample B and sample C at different temperatures.
    Fig. 9. The dependence of dark current on bias voltage of sample A,sample B and sample C at different temperatures.
    Relationship between blackbody responsiveness and bias voltage for samples A,B,and C at different temperatures.
    Fig. 10. Relationship between blackbody responsiveness and bias voltage for samples A,B,and C at different temperatures.
    Sample NO.Sample typeWell width(X)Barrier width(nm)Well doping concentration(cm-3period
    ANUQWIP6.1 nm75→151×1017→1×101820
    BNUQWIP6.3 nm75→151×1017→1×101820
    CNUQWIP6.5 nm75→151×1017→1×101820
    DQWIP6.5 nm455×101720
    Table 1. Molecular beam epitaxy growth parameters of samples with different structures
    LayerMaterial

    Thickness

    (nm)

    Description

    Doping

    concentration(cm-3

    7GaAs:Si1 100Top contact layer1×1018
    6Al0.18Ga0.82As15Barrier
    GaAs1.6
    5GaAs:SiXQuantum well20 periods1×1017→1×1018
    GaAs1.6
    4Al0.18Ga0.82As75→15Barrier
    3GaAs:Si1 200Bottom contact layer1×1018
    2Al0.5Ga0.5As300Etch stop layer
    1GaAs300buffer layer
    3inch GaAs(100)substrate
    Table 2. Molecular Beam Epitaxy structure of Non-uniform Quantum Well materials
    Jia-Ping SU, Xiao-Hao ZHOU, Zhou TANG, Liu-Yan FAN, Shun-Ji XIA, Ping-Ping CHEN, Ze-Zhong CHEN. Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 7
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