Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 35 >Issue 5 >Page 559 > Article

Infrared and Laser Engineering
Vol. 35, Issue 5, 559 (2006)

Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target

[in Chinese]^*, [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target[J]. Infrared and Laser Engineering, 2006, 35(5): 559 Copy Citation Text

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References

[3] MIYATAKE T,SUGIYAMA I,KAJIHARA N,et al.Effects of photocurrent multiplication in HgCdTe photodiodes[C] //Proceedings of SPIE Infrared Technology and Applications ⅩⅩⅢ,1997,3061:68-77.

[4] ELLIOTT C T,GORDON N T,HALL R S.Reverse breakdown in longwavelength lateral collection Hg1-xCdxTe[J].Journal of Vacuum Science and Technology,1990,A8:1251.

[5] HANSON G L,SCHMIT J L.Calculation of intrinsic concentration in Hg1-xCdxTe[J].J Appl Phys,1983,54:1639.

[6] GOPAL V,SINGH S K,MEHRA R M.Analysis of dark current contributions in mercury cadmium telluride junction diodes[J].Infrared Physics & Technology,2002,43:317-326.

[8] ROSBECK J P,STARR R E,PRICE S L,et al.Background and temperature dependent current-voltage characteristics of HgCdTe photodiodes[J].J Appl Phys,1982,53(9):6430-6440.

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[in Chinese], [in Chinese], [in Chinese]. Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target[J]. Infrared and Laser Engineering, 2006, 35(5): 559

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