Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 35 >Issue 5 >Page 559 > Article

Infrared and Laser Engineering
Vol. 35, Issue 5, 559 (2006)

Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target

[in Chinese]^*, [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target[J]. Infrared and Laser Engineering, 2006, 35(5): 559 Copy Citation Text

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Abstract

[in Chinese], [in Chinese], [in Chinese]. Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target[J]. Infrared and Laser Engineering, 2006, 35(5): 559

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