• Laser & Optoelectronics Progress
  • Vol. 56, Issue 1, 010001 (2019)
Yanzhen Liu, Guohui Li, Yanxia Cui*, Ting Ji, and Yuying Hao
Author Affiliations
  • Key Laboratory of Advanced Transducers and Intelligent Control System (Ministry of Education), College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, Shanxi 310024, China
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    DOI: 10.3788/LOP56.010001 Cite this Article Set citation alerts
    Yanzhen Liu, Guohui Li, Yanxia Cui, Ting Ji, Yuying Hao. Research Progress in Perovskite Photodetectors[J]. Laser & Optoelectronics Progress, 2019, 56(1): 010001 Copy Citation Text show less
    Structures and performances of photoconductive type perovskite photodetectors. (a) Device configuration (the inset) and the wavelength dependent responsivity for a MAPbI3 polycrystalline film photodetector[41]; (b) device configuration (the inset) and the transient response of a CYTOP-protected photodetector based on MAPbI3-xClx polycrystalline film[38]; (c) MAPbI3 polycrystalline film with island-structured morphology[50]; (d) comparison of irradiance power-dependent responsivity between a sing
    Fig. 1. Structures and performances of photoconductive type perovskite photodetectors. (a) Device configuration (the inset) and the wavelength dependent responsivity for a MAPbI3 polycrystalline film photodetector[41]; (b) device configuration (the inset) and the transient response of a CYTOP-protected photodetector based on MAPbI3-xClx polycrystalline film[38]; (c) MAPbI3 polycrystalline film with island-structured morphology[50]; (d) comparison of irradiance power-dependent responsivity between a sing
    Photovoltaic type perovskite photodetectors-structures and performances. (a)(b)Structural diagram of ITO/PEDOT∶PSS/MAPbX3/PCBM/HBL/Al devices and their J-V curves with different hole blocking layers (HBL)[86]; (c) the J-V curves of photodetectors with different thicknesses of C60 and/or PCBM as the electron transport layer[84]; (d) J-V curves of photodetectors with PEDOT∶PSS or NiOx as the hole transport layer[87]; (e) The transient photon current curve of the ITO/PTAA/MAPbX3/C60/BCP/Cu device[8
    Fig. 2. Photovoltaic type perovskite photodetectors-structures and performances. (a)(b)Structural diagram of ITO/PEDOT∶PSS/MAPbX3/PCBM/HBL/Al devices and their J-V curves with different hole blocking layers (HBL)[86]; (c) the J-V curves of photodetectors with different thicknesses of C60 and/or PCBM as the electron transport layer[84]; (d) J-V curves of photodetectors with PEDOT∶PSS or NiOx as the hole transport layer[87]; (e) The transient photon current curve of the ITO/PTAA/MAPbX3/C60/BCP/Cu device[8
    (a)(b) Structural diagram and transfer characteristics under dark and light conditions of the phototransistor photodetector based on MAPbI3100; (c) structure diagram (inset) and the light intensity dependent responsivity of the MAPbI3 nanowire and carbon nanotubes transistor hybrid phototransistor photodetector[113]
    Fig. 3. (a)(b) Structural diagram and transfer characteristics under dark and light conditions of the phototransistor photodetector based on MAPbI3100; (c) structure diagram (inset) and the light intensity dependent responsivity of the MAPbI3 nanowire and carbon nanotubes transistor hybrid phototransistor photodetector[113]
    (a) Band diagram of ITO/MAPbI3/TPD-Si2/MoO3/Ag and the schematic of photomultiplication[118]; (b) wavelength-dependent gain (solid lines with symbols) under different reverse biases[118]; (c) band diagram of ITO/PEDOT∶PSS/MAPbI3∶PbS QDs/PCBM/BCP/Al and the schematic diagram of photomultiplication[119]; (d) EQE spectra of device under different reverse biases[119]; (e) transient behavior of charges in FTO/ MAPbI3/Spiro-MeOTAD/Au when it is kept in dark and structural diagram of the device[105]; (
    Fig. 4. (a) Band diagram of ITO/MAPbI3/TPD-Si2/MoO3/Ag and the schematic of photomultiplication[118]; (b) wavelength-dependent gain (solid lines with symbols) under different reverse biases[118]; (c) band diagram of ITO/PEDOT∶PSS/MAPbI3∶PbS QDs/PCBM/BCP/Al and the schematic diagram of photomultiplication[119]; (d) EQE spectra of device under different reverse biases[119]; (e) transient behavior of charges in FTO/ MAPbI3/Spiro-MeOTAD/Au when it is kept in dark and structural diagram of the device[105]; (
    (a) Absorption and EQE curves of a narrow band perovskite photodetector based on the principle of charge collection narrowing[82]; (b) schematic showing that the charge collection principle with the narrow band perovskite photodetector is excited light with energy above the bandgap[24]; (c) normalized EQE spectra of narrow band perovskite photodetectors with different center wavelengths[24]; (d) schematic illustrating the narrowband photoconduction type perovskite photodetector[47]; (e) device s
    Fig. 5. (a) Absorption and EQE curves of a narrow band perovskite photodetector based on the principle of charge collection narrowing[82]; (b) schematic showing that the charge collection principle with the narrow band perovskite photodetector is excited light with energy above the bandgap[24]; (c) normalized EQE spectra of narrow band perovskite photodetectors with different center wavelengths[24]; (d) schematic illustrating the narrowband photoconduction type perovskite photodetector[47]; (e) device s
    Yanzhen Liu, Guohui Li, Yanxia Cui, Ting Ji, Yuying Hao. Research Progress in Perovskite Photodetectors[J]. Laser & Optoelectronics Progress, 2019, 56(1): 010001
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