• Infrared and Laser Engineering
  • Vol. 51, Issue 5, 20210599 (2022)
Xiaohan Tian1, Jiangfeng Zhang1, Xiaoling Zhang2, and Qingduan Meng1
Author Affiliations
  • 1School of Electrical Engineering, Henan University of Science and Technology, Luoyang 471023, China
  • 2School of Software, Henan University of Science and Technology, Luoyang 471023, China
  • show less
    DOI: 10.3788/IRLA20210599 Cite this Article
    Xiaohan Tian, Jiangfeng Zhang, Xiaoling Zhang, Qingduan Meng. Effects of isolation trough on cleavage of InSb chip in InSb detector[J]. Infrared and Laser Engineering, 2022, 51(5): 20210599 Copy Citation Text show less
    References

    [1] Jiachen Liu, Xin Tang, Yonglin Ju. Numerical simulation on the fast cooling-down process of a miniature infrared detector module. Infrared and Laser Engineering, 44, 816-820(2015).

    [2] Wei Bai, Chao Zhao, Ming Liu. Development and application of InSb crystal. Journal of Synthetic Crystals, 49, 2230-2243(2020).

    [3] Jinzhi Liang, Changbin Xu, Haiyan Li. Fabrication technology of InSb IR focal plane array. Infrared, 40, 7-12(2019).

    [4] Weida Hu, Qing Li, Xiaoshuang Chen, et al. Recent progress on advanced infrared photodetectors. Acta Physica Sinica, 68, 120701(2019).

    [5] Wei Bai. Development status of InSb infrared focal plane array detectors. Infrared, 40, 1-14(2019).

    [6] Yang Wang, Xing Lu, Chao Meng, et al. Thermal cycle characteristic of InSb focal plane array detector. Infrared and Laser Engineering, 44, 3701-3706(2015).

    [7] Shengqiong Lei. Development of InSb infrared material and devices at Kunming Institute of Physics. Infrared and Laser Engineering, 36, 15-18(2007).

    [8] Wen Wang, Xiaolei Zhang, Yanqiu Lv, et al. InSb infrared focal plane arrays detector based on Si wafer. Infrared and Laser Engineering, 43, 1359-1363(2014).

    [9] Hongshan Mu, Suo Dong, Jinzhi Liang. Study of dead pixels in InSb IRFPA detector. Infrared, 31, 9-13(2010).

    [10] Qingduan Meng, Xiaoling Zhang, Yanqiu Lv, et al. Function reconsideration of indium bump in InSb IRFPAs. Optical and Quantum Electronics, 51, 304(2019).

    [11] M Heidari-Rarani, M Sayedain. Finite element modeling strategies for 2D and 3D delamination propagation in composite DCB specimens using VCCT, CZM and XFEM approaches. Theoretical and Applied Fracture Mechanics, 103, 102246(2019).

    [12] Hongyan Geng, Zhou Zhou, Guofeng Song, et al. Flip chip bonding technology for IR detectors. Infrared and Laser Engineering, 43, 722-726(2014).

    [13] D G Yang, L J Ernst, Hof C van`t, et al. Vertical die crack stresses of flip chip induced in major package assembly processes. Microelectronics Reliability, 40, 1533-1538(2000).

    [14] L Wang, J S Yang, J X Ni, et al. Influence of cracks in APS-TBCs on stress around TGO during thermal cycling: A numerical simulation study. Surface & Coatings Technology, 285, 98-112(2016).

    [15] Y He, B E Moreira, A Overson, et al. Thermal characterization of an epoxy-based underfill material for flip chip packaging. Thermochimica Acta, 357-358, 1-8(2000).

    [16] Qingduan Meng, Xiaoling Zhang, Liwen Zhang, et al. Structural modeling of 128× 128 InSb focal plane array detector. Acta Physica Sinica, 61, 190701(2012).

    [17] Qingduan Meng, Qian Yu, Liwen Zhang, et al. Mechanical parameters selection in InSb focal plane array detector normal direction. Acta Physica Sinica, 61, 226103(2012).

    [18] E F Rybicki, M F Kanninen. A finite element calculation of stress intensity factors by a modified crack closure integral. Engineering Fracture Mechanics, 9, 931-938(1977).

    Xiaohan Tian, Jiangfeng Zhang, Xiaoling Zhang, Qingduan Meng. Effects of isolation trough on cleavage of InSb chip in InSb detector[J]. Infrared and Laser Engineering, 2022, 51(5): 20210599
    Download Citation