Xiaohan Tian, Jiangfeng Zhang, Xiaoling Zhang, Qingduan Meng. Effects of isolation trough on cleavage of InSb chip in InSb detector[J]. Infrared and Laser Engineering, 2022, 51(5): 20210599
- Infrared and Laser Engineering
- Vol. 51, Issue 5, 20210599 (2022)
Fig. 1. Two-dimensional model of InSb IRFPAs (local model). (a) Without isolation trough; (b) With V-shaped isolation trough added; (c) Bottom of V-shaped isolation trough is connected with preset crack; (d) Preset crack is away from the bottom of V-shaped isolation trough with a distance of 1 μm
Fig. 2. Coefficients of thermal expansion (CTE) depending on temperature for InSb, underfill and Silicon-ROIC
Fig. 3. (a) In-plane normal stress distribution of InSb front surface; (b) In-plane normal stress distribution in region of isolation trough existed
Fig. 4. Energy release rate of the preset crack connected with the bottom of V-shaped isolation trough
Fig. 5. Comparison of energy release rate between the preset crack connected directly with the bottom of V-shaped isolation trough and the preset crack is away from the bottom of V-shaped isolation trough with a distance of 1 μm
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Table 1. Mechanical parameters and specific sizes of InSb IRFPAs
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