Santosh Kumar Gupta, Rupesh Shukla. Bandgap engineered novel g-C3N4/G/h-BN heterostructure for electronic applications[J]. Journal of Semiconductors, 2019, 40(3): 032801

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- Journal of Semiconductors
- Vol. 40, Issue 3, 032801 (2019)

Fig. 1. (Color online) Proposed heterostructures (a) G/g-C3N4/h-BN in ABA stack and (b) g-C3N4/G/h-BN in AAA stack.

Fig. 2. (Color online) Band structure of BLG in Bernal (AB) stack at (a) 0 and (b) 4 V/nm.

Fig. 3. (Color online) Bandgap in Bernal stack w.r.t. (a) Electric field (E) keeping interlayer distance d 1 = d 2 = 2.8 Å and (b) interlayer distance (keeping d 1 = d 2) and E = 6 V/nm.

Fig. 4. (Color online) Bandgap in hexagonal stack w.r.t. (a) Electric field (E ) keeping interlayer distance d 1 = d 2 = 2.8 Å and (b) interlayer distance (keeping d 1 = d 2) and E = 6 V/nm.

Fig. 5. (Color online) Binding energies for (1) GBL -AB stack, (2) GBL-AA, (3) G/BN-AB, (4) G/BN-AA, (5) G/C3N4-AB, (6) G/C3N4-AA, (7) BN/G/BN-AB, (8) BN/G/BN-AA, (9) C3N4/G/C3N4-ABA, (10) C3N4/G/C3N4-AAA, (11) G/C3N4/BN- ABA, and (12) C3N4/G/BN-AAA.
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Table 1. Interlayer distance in Bernal stack.
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Table 2. Interlayer distance in hexagonal stack.
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Table 3. Binding energies (E b) for different heterostructures.
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Table 4. Effective mass at 6 V/nm field with interlayer distance (both d 1 and d 2) fixed at 2.8 Å.

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