High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

Zhanqiang Ren; Qingmin Li; Bo Li; Kechang Song

doi:10.1088/1674-4926/41/3/032901

Journals >Journal of Semiconductors >Volume 41 >Issue 3 >Page 032901 > Article

Journal of Semiconductors
Vol. 41, Issue 3, 032901 (2020)

High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

Zhanqiang Ren, Qingmin Li, Bo Li, and Kechang Song

Author Affiliations

Xi’an Lumcore Optoelectronics Technologies Co., Ltd., Xi’an 710077, China

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DOI: 10.1088/1674-4926/41/3/032901 Cite this Article

Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song. High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. Journal of Semiconductors, 2020, 41(3): 032901 Copy Citation Text

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Fig. 1. (Color online) A typical P–I–V curves of the fabricated laser diodes.

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Fig. 2. The spectrum of the fabricated laser diodes.

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Fig. 3. (Color online) The far field divergence angles of the fabricated laser diodes.

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Fig. 4. The COMD measurement.

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Fig. 5. (Color online) Reliability test.

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Layer	Material	x/y value	Thickness (μm)	Doping (cm^–3)
10	GaAs		0.15	p > 4.0 × 10 ¹⁹
9	Al_xGaAs	0.05–0.53	0.05	p = 3.0 × 10¹⁸
8	Al_xGaAs	0.53	1.0	p = 2.0 × 10¹⁸
7	Al_xGaAs	0.35	0.4	Undoped
6	In_xAl_yGaAs	0.11/0.09	0.0075	Undoped
5	Al_xGaAs	0.35	0.45	Undoped
4	Al_xGaAs	0.35	0.3	n = 1.0 × 10¹⁷
3	Al_xGaAs	0.53	1.0	n = 5.0 × 10¹⁷
2	Al_xGaAs	0.45–0.05	0.05	n = 1.0 × 10¹⁸– 2.0 × 10¹⁸
1	GaAs buffer		0.5	n = 2.0 × 10¹⁸

Table 1. The device structure.

Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song. High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. Journal of Semiconductors, 2020, 41(3): 032901

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