Xiaoxue Li, Lingcheng Huang, Yongqin Hao. Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931001
- Laser & Optoelectronics Progress
- Vol. 59, Issue 19, 1931001 (2022)
Fig. 1. Refractive index curves of H4 films at different substrate temperatures
Fig. 2. Atomic force microscope (AFM) images of surface morphology of H4 films at different substrate temperatures. (a) 125 ℃; (b) 150 ℃; (c) 175 ℃; (d) 200 ℃
Fig. 3. Refractive index curves of H4 films at different ion-beam densities
Fig. 4. AFM images of surface morphology of H4 films at different ion-beam densities. (a) 105 μA·cm-2; (b) 120 μA·cm-2; (c) 135 μA·cm-2; (d) 150 μA·cm-2
Fig. 5. Extinction coefficient of H4 films at substrate temperature of 175 ℃ and ion-beam density of 120 μA·cm-2
Fig. 6. Transmittance spectra of H4 films after post-treatment. (a) High temperature annealing; (b) plasma post-treatment
Fig. 7. Reflectance curves of HR films of different materials. Solid line is theoretical value and dotted line is measured value
Fig. 8. Damage morphology of HR films under laser power density of 600 MW/cm2. (a) HR films of TiO2; (b) HR films of Ta2O5; (c) HR films of H4
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Table 1. Surface roughnesses of H4 films at different substrate temperatures
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Table 2. Surface roughnesses of H4 films at different ion-beam densities
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Table 3. Process parameters of three kinds of HR films
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