• Laser & Optoelectronics Progress
  • Vol. 59, Issue 19, 1931001 (2022)
Xiaoxue Li1, Lingcheng Huang2, and Yongqin Hao1、*
Author Affiliations
  • 1State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology,Changchun 130022, Jilin, China
  • 2Beijing Opto-Electronics Technology Co., Ltd., Beijing 100015, China
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    DOI: 10.3788/LOP202259.1931001 Cite this Article Set citation alerts
    Xiaoxue Li, Lingcheng Huang, Yongqin Hao. Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931001 Copy Citation Text show less

    Abstract

    LaTiO3 (H4) films were prepared using ion-beam-assisted electron beam evaporation. The effect of substrate temperature, ion-beam density, high-temperature annealing, and plasma post-treatment on the optical properties and surface topography of the H4 films were tested. Results show that increasing the substrate temperature and ion-beam density appropriately can improve the refractive index and film quality. Under 175 °C substrate temperature and 120 μA/cm2 ion-beam density, the refractive index of the H4 films can reach 2.70. Moreover, annealing and plasma post-treatment can further improve the film quality. The optimized process parameters were used to prepare high reflection (HR) films with H4 for a 980-nm laser diode. The HR films with H4 exhibit the best laser damage resistance under 600 MW/cm2 laser power density when compared with the HR films made with Ta2O5 or TiO2 as high-index materials.
    Xiaoxue Li, Lingcheng Huang, Yongqin Hao. Preparing H4 Films and Their Laser Damage Resistance Deposited Using Ion-Beam-Assisted Electron Beam Evaporation[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931001
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