Author Affiliations
1 State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Sciences, Changchun, Jilin 130033, China2 University of Chinese Academy of Sciences, Beijing 100049, Chinashow less
Fig. 1. (a) Schematic of vertical-chip structure; (b) schematic of flip-chip structure; (c) surface of vertical-chip;(d) surface of flip-chip; (e) optical power curves for vertical-chip and flip-chip
Fig. 2. Equivalent circuit diagram of micro LED array
Fig. 3. 6×6 flip-chip AlGaInP LED array device
Fig. 4. (a) Schematic of test system; (b) experimental test system
Fig. 5. Theoretical calculation and test results of output power. (a) m=1, ambient temperature of 30 ℃;(b) m=1, ambient temperature of 60 ℃; (c) m=6, ambient temperature of 30 ℃;(d) m=6, ambient temperature of 60 ℃
Fig. 6. Variation of output power of LED array with injection current
Fig. 7. Temperature distributions of basement structure. (a) PDMS rectangular basement structure;(b) Cu rectangular basement structure; (c) PDMS perforated rectangular basement structure;(d) Cu perforated rectangular basement structure; (e) PDMS column array basement structure;(f) Cu column array basement structure
Fig. 8. (a) Relationship between thermal resistance of PDMS and air convection coefficient for different structures;(b) relationship between thermal resistance of Cu and air convection coefficient for different structures
Parameter | Ifo | a0 | a1 | b0 | b1 |
---|
Value | 0.2 | 0 | 0.5 | -0.001 | 0.305 | Parameter | Rs /Ω | KV /(V·K-1) | Vo /V | Rj /(K·W-1) | Фo /(W·lm-1) | Value | 20.07 | -0.005 | 1.59 | 33 | 80 |
|
Table 1. Photoelectric parameters of AlGaInP LED array with m=1
Parameter | Ifo | a0 | a1 | b0 | b1 |
---|
Value | 1 | 0 | 0.08 | -0.001 | 0.303 | Parameter | Rs /Ω | KV /(V·K-1) | Vo /V | Rj /(K·W-1) | Фo /(W·lm-1) | Value | 4.05 | -0.002 | 1.58 | 53 | 400 |
|
Table 2. Photoelectric parameters of AlGaInP LED array with m=6