In order to improve the energy utilization of red LED array devices, we study the photoelectric characteristics of flip-chip AlGaInP-based light emitting diode (LED) array device. Firstly, the light output power characteristics of AlGaInP-based LED with vertical type and flip-chip type structures are tested and compared with each other. The results show that the light output power of flip-chip LED is higher than that of the vertical LED. Then, a model to calculate the output power of flip-chip LED array is proposed, which is used to calculate the relationship between light output power, ambient temperature and base thermal resistance. The results reveal that with the increase of the base thermal resistance and ambient temperature, the output power of the LED array device decreases, the injection current at saturation shifts forward, and the photoelectric performance of LED array decreases. The 6×6 flip-chip AlGaInP-based LED array device is prepared using the transfer method. The testing results are consistent with the theoretical predictions. Finally, the numerical relationships between the thermal resistance of Cu and polydimethylsiloxane (PDMS) with different basement structures and ambient conditions are analyzed by finite element method. The results show that the heat dissipation capacity of Cu is relatively uniform and its thermal resistance is not sensitive to the structure and the air convection rate. However, for PDMS materials, the thermal resistance is relatively large and can be effectively reduced by optimizing its structure and increasing the air convection rate, thereby improve the photoelectric performance of the micro LED array device.