Optical Emission Analyses of N2/TMG ECR Plasma for Deposition of GaN Film

FU Si-lie; WANG Chun-an; CHEN Jun-fang

doi:10.3964/j.issn.1000-0593(2013)04-1108-04

Journals >Spectroscopy and Spectral Analysis >Volume 33 >Issue 4 >Page 1108 > Article

Spectroscopy and Spectral Analysis
Vol. 33, Issue 4, 1108 (2013)

Optical Emission Analyses of N2/TMG ECR Plasma for Deposition of GaN Film

FU Si-lie^1、*, WANG Chun-an², and CHEN Jun-fang¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: 10.3964/j.issn.1000-0593(2013)04-1108-04 Cite this Article

FU Si-lie, WANG Chun-an, CHEN Jun-fang. Optical Emission Analyses of N2/TMG ECR Plasma for Deposition of GaN Film[J]. Spectroscopy and Spectral Analysis, 2013, 33(4): 1108 Copy Citation Text

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Abstract

The optical emission spectroscopy of hybrid N2/trimethylgallium (TMG) plasma in an ECR-PECVD system was investigated. The results indicate that the TMG gas is strongly dissociated into Ga*, CH and H even under self-heating condition. Ga species and nitrogen molecule in metastable state are dominant in hybrid ECR plasma. The concentration of metastable nitrogen molecule increases with the microwave power. On the other hand, the concentration of excited nitrogen molecules and of nitrogen ion decreases when the microwave power is higher than 400 W.

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FU Si-lie, WANG Chun-an, CHEN Jun-fang. Optical Emission Analyses of N2/TMG ECR Plasma for Deposition of GaN Film[J]. Spectroscopy and Spectral Analysis, 2013, 33(4): 1108

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