Analytical Study of the Photovoltaic Transient Response

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 19 >Issue 2 >Page 155 > Article

Chinese Journal of Quantum Electronics
Vol. 19, Issue 2, 155 (2002)

Analytical Study of the Photovoltaic Transient Response

[in Chinese]¹, [in Chinese]², and [in Chinese]³

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Analytical Study of the Photovoltaic Transient Response[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 155 Copy Citation Text

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References

[1] Huang Weiqi et al.Effect of the transient response in Si/Ge parallelizing PN junction [J].J.Mater.Sci.Technol..1999,15(4): 383

[2] Pedersen E V et al.Bimodal-height distrution of seif-assembled germaniumislands growu on Si Ge substrates [J].Thin Solid Films,1998,321:92～97

[3] Larsen A N et al.Nanostructure of Ge deposited on Si(001) [J].Thin Solid Films,1999,388:165

[in Chinese], [in Chinese], [in Chinese]. Analytical Study of the Photovoltaic Transient Response[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 155

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