Broadband rhenium disulfide optical modulator for solid-state lasers

Xiancui Su; Baitao Zhang; Yiran Wang; Guanbai He; Guoru Li; Na Lin; Kejian Yang; Jingliang He; Shande Liu

doi:10.1364/PRJ.6.000498

[1] A. K. Geim, K. S. Novoselov. The rise of graphene. Nat. Mater., 6, 183-191(2007).

[2] J. E. Moore. The birth of topological insulators. Nature, 464, 194-198(2010).

[3] M. Z. Hasan, C. L. Kane. Colloquium: topological insulators. Rev. Mod. Phys., 82, 3045-3067(2010).

[4] Y. Chen, C. Zhao, S. Chen, J. Du, P. Tang, G. Jiang, H. Zhang, S. Wen, D. Tang. Large energy, wavelength widely tunable, topological insulator Q-switched erbium-doped fiber laser. IEEE J. Sel. Top. Quantum Electron., 20, 0900508(2014).

[5] Y. Chen, C. Zhao, H. Huang, S. Chen, P. Tang, Z. Wang, S. Lu, H. Zhang, S. Wen, D. Tang. Self-assembled topological insulator: Bi₂Se₃ membrane as a passive Q-switcher in an erbium-doped fiber laser. J. Lightwave Technol., 31, 2857-2863(2013).

[6] H. O. Churchill, P. Jarillo-Herrero. Phosphorus joins the family. Nat. Nanotechnol., 9, 330-331(2014).

[7] Y. Xu, Z. Wang, Z. Guo, H. Huang, Q. Xiao, H. Zhang, X. Yu. Solvothermal synthesis and ultrafast photonics of black phosphorus quantum dots. Adv. Opt. Mater., 4, 1223-1229(2016).

[8] J. Ma, S. Lu, Z. Guo, X. Xu, H. Zhang, D. Tang, D. Fan. Few-layer black phosphorus based saturable absorber mirror for pulsed solid-state lasers. Opt. Express, 23, 22643-22648(2015).

[9] L. Kong, Z. Qin, G. Xie, Z. Guo, H. Zhang, P. Yuan, L. Qian. Black phosphorus as broadband saturable absorber for pulsed lasers from 1 μm to 2.7 μm wavelength. Laser Phys. Lett., 13, 045801(2016).

[10] Y. Chen, G. Jiang, S. Chen, Z. Guo, X. Yu, C. Zhao, H. Zhang, Q. Bao, S. Wen, D. Tang, D. Fan. Mechanically exfoliated black phosphorus as a new saturable absorber for both Q-switching and mode-locking laser operation. Opt. Express, 23, 12823-12833(2015).

[11] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz. Atomically thin MoS₂: a new direct-gap semiconductor. Phys. Rev. Lett., 105, 136805(2010).

[12] Y. Jiang, L. Miao, G. Jiang, Y. Chen, X. Qi, X. Jiang, H. Zhang, S. Wen. Broadband and enhanced nonlinear optical response of MoS₂/graphene nanocomposites for ultrafast photonics applications. Sci. Rep., 5, 16372(2015).

[13] A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C. N. Lau. Superior thermal conductivity of single-layer graphene. Nano Lett., 8, 902-907(2008).

[14] G. X. Ni, H. Z. Yang, W. Ji, S. J. Baeck, C. T. Toh, J. H. Ahn, B. Özyilmaz, G. X. Ni, H. Z. Yang, W. Ji. Tuning optical conductivity of large-scale CVD graphene by strain engineering. Adv. Mater., 26, 1081-1086(2014).

[15] J. A. Wilson, A. D. Yoffe. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys., 18, 193-335(1969).

[16] L. Sun, Z. Lin, J. Peng, J. Weng, Y. Huang, Z. Luo. Preparation of few-layer bismuth selenide by liquid-phase-exfoliation and its optical absorption properties. Sci. Rep., 4, 4794(2014).

[17] S. B. Lu, C. J. Zhao, Y. H. Zou, S. Q. Chen, Y. Chen, Y. Li, H. Zhang, S. C. Wen, D. Y. Tang. Third order nonlinear optical property of Bi₂Se₃. Opt. Express, 21, 2072-2082(2013).

[18] M. W. Lin, C. Ling, Y. Y. Zhang, H. J. Yoon, M. C. Cheng, L. A. Agapito, N. Kioussis, N. Widjaja, Z. X. Zhou. Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors. Nanotechnology, 22, 265201(2011).

[19] X. Li, X. Wang, L. Zhang, S. Lee, H. Dai. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science, 319, 1229-1232(2008).

[20] Y. Zhang, J. Ye, Y. Matsuhashi, Y. Iwasa. Ambipolar MoS₂ thin flake transistors. Nano Lett., 12, 1136-1140(2012).

[21] H. Zhu, C. A. Richter, E. Zhao, J. E. Bonevich, W. A. Kimes, H. J. Jang, H. Yuan, H. T. Li, A. Arab, O. Kivillov, J. E. Maslar, D. E. Ioannou, Q. L. Li. Topological insulator Bi₂Se₃ nanowire high performance field-effect transistors. Sci. Rep., 3, 1757(2013).

[22] Q. L. Bao, H. Zhang, Y. Wang, Z. Ni, Y. Yan, Z. X. Shen, K. P. Loh, D. Y. Tang. Atomic-layer graphene as a saturable absorber for ultrafast pulsed lasers. Adv. Funct. Mater., 19, 3077-3083(2009).

[23] H. Zhang, Q. L. Bao, D. Y. Tang, L. M. Zhao, K. P. Loh. Large energy soliton erbium-doped fiber laser with a graphene-polymer composite mode locker. Appl. Phys. Lett., 95, 141103(2009).

[24] J. Du, Q. K. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, H. Zhang. Ytterbium-doped fiber laser passively mode locked by few-layer molybdenum disulfide (MoS₂) saturable absorber functioned with evanescent field interaction. Sci. Rep., 4, 6346(2014).

[25] H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, K. P. Loh. Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics. Opt. Express, 22, 7249-7260(2014).

[26] Z. Q. Luo, Y. Z. Huang, J. Weng, H. H. Cheng, Z. Q. Lin, B. Xu, Z. P. Cai, H. Y. Xu. 1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi₂Se₃ as a saturable absorber. Opt. Express, 21, 29516-29522(2013).

[27] H. Mu, Z. Wang, J. Yuan, S. Xiao, C. Chen, Y. Chen, Y. Chen, J. Song, Y. Wang, Y. Xue, H. Zhang, Q. Bao. Graphene-Bi₂Te₃ heterostructure as saturable absorber for short pulse generation. ACS Photon., 2, 832-841(2015).

[28] J. S. Ponraj, Z. Xu, S. C. Dhanabalan, H. Mu, Y. Wang, J. Yuan, P. Li, S. Thakur, M. Ashrafi, K. Mccoubrey, Y. Zhang, S. Li, H. Zhang, Q. Bao. Photonics and optoelectronics of two-dimensional materials beyond graphene. Nanotechnology, 27, 462001(2016).

[29] M. Z. Rahman, C. W. Kwong, K. Davey, S. Z. Qiao. 2D phosphorene as a water splitting photocatalyst: fundamentals to applications. Energy Environ. Sci., 9, 709-728(2016).

[30] H. Tian, M. L. Chin, S. Najmaei, Q. Guo, F. Xia, H. Wang, M. Dubey. Optoelectronic devices based on two-dimensional transition metal dichalcogenides. Nano Res., 9, 1543-1560(2016).

[31] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol., 7, 699-712(2012).

[32] Y. C. Lin, H. P. Komsa, C. H. Yeh, T. Björkman, Z. Y. Liang, C. H. Ho, Y. S. Huang, P. W. Chiu, A. V. Krasheninnikov, K. Suenaga. Single-layer ReS₂: two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano, 9, 11249-11257(2015).

[33] E. Gibney. The super materials that could trump graphene. Nature, 522, 274-276(2015).

[34] L. Hart, S. Dale, S. Hoye, J. L. Webb, D. Wolverson. Rhenium dichalcogenides: layered semiconductors with two vertical orientations. Nano Lett., 16, 1381-1386(2016).

[35] D. Wolverson, L. S. Hart. Lattice dynamics of the rhenium and technetium dichalcogenides. Nano. Res. Lett., 11, 250(2016).

[36] M. Rahman, K. Davey, S. Z. Qiao. Advent of 2D rhenium disulfide (ReS₂): fundamentals to applications. Adv. Funct. Mater., 27, 1606129(2017).

[37] E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, D. Xing. Integrated digital inverters based on two-dimensional anisotropic ReS₂ field-effect transistors. Nat. Commun., 6, 6991(2015).

[38] S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H. Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, J. Wu. Monolayer behavior in bulk ReS₂ due to electronic and vibrational decoupling. Nat. Commun., 5, 3252(2014).

[39] M. Cardona, O. Madelung, P. Fulde, K. V. Klitzing, H. Queisser. Introduction to Solid-State Theory, 2(1996).

[40] F. Banhart, J. Kotakoski, A. V. Krashennikov. Structural defects in graphene. ACS Nano, 5, 26-41(2010).

[41] S. X. Wang, H. H. Yu, H. J. Zhang, A. Z. Wang, M. W. Zhao, Y. X. Chen, L. M. Mei, J. Y. Wang. Broadband few-layer MoS₂ saturable absorbers. Adv. Mater., 26, 3538-3544(2014).

[42] T. Li, G. Galli. Electronic properties of MoS₂ nanoparticles. J. Phys. Chem. C, 111, 16192-16196(2007).

[43] Y. D. Cui, F. F. Lu, X. M. Liu. Nonlinear saturable and polarization-induced absorption of rhenium disulphide. Sci. Rep., 7, 40080(2017).

[44] D. Mao, X. Q. Cui, X. T. Gan, M. K. Li, W. D. Zhang, H. Lu, J. L. Zhao. Passively Q-switched and mode-locked fiber laser based on a ReS₂ saturable absorber. IEEE J. Sel. Top. Quantum Electron., 24, 1100406(2018).

[45] X. C. Su, H. K. Nie, Y. R. Wang, G. R. Li, B. Z. Yan, B. T. Zhang, K. J. Yang, J. L. He. Few-layered ReS₂ as saturable absorber for 2.8 μm solid state laser. Opt. Lett., 42, 3502-3505(2017).

[46] Z. G. Yu, Y. Q. Cai, Y. W. Zhang. Robust direct bandgap characteristics of one- and two-dimensional ReS₂. Sci. Rep., 5, 13783(2015).

[47] C. H. Ho, Y. S. Huang, P. C. Liao, K. K. Tiong. Crystal structure and band-edge transitions of ReS_2-xSe_x layered compounds. J. Phys. Chem. Solids, 60, 1797-1804(1999).

[48] D. Mao, S. L. Zhang, Y. D. Wang, X. T. Gan, W. D. Zhang, T. Mei, Y. G. Wang, Y. S. Wang, H. B. Zeng, J. L. Zhao. WS₂ saturable absorber for dissipative soliton mode locking at 1.06 and 1.55 μm. Opt. Express, 23, 27509-27519(2015).

[49] S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, J. Wu. Two-dimensional semiconductor alloys: Monolayer Mo_1-xW_xSe₂. Sci. Rep., 3, 2657(2014).

[50] D. A. Chenet, O. B. Aslan, P. Y. Huang, C. Fan, A. M. van der Zande, T. F. Heinz, J. C. Hone. In-plane anisotropy in mono- and few-layer ReS₂ probed by Raman spectroscopy and scanning transmission electron microscopy. Nano Lett., 15, 5667-5672(2015).

[51] Y. Feng, W. Zhou, Y. Wang, J. Zhou, E. Liu, Y. Fu, Z. Ni, X. Wu, H. Yuan, F. Miao, B. Wang, X. Wan, D. Xing. Raman vibrational spectra of bulk to monolayer ReS₂ with lower symmetry. Phys. Rev. B, 92, 054110(2015).

[52] M. Sheik-Bahae, A. A. Said, T. H. Wei, D. J. Hagan, E. W. Van Stryland. Sensitive measurement of optical nonlinearities using a single beam. IEEE J. Quantum Electron., 26, 760-769(1990).

[53] Y. F. Chen, Y. P. Lan. Comparison between c-cut and a-cut Nd:YVO₄ lasers passively Q-switched with a Cr⁴⁺: YAG saturable absorber. Appl. Phys. B, 74, 415-418(2002).

[54] P. Sévillano, P. Georges, F. Druon, D. Descamps, E. Cormier. 32-fs Kerr-lens mode-locked Yb:CaGdAlO₄ oscillator optical pumped by a bright fiber laser. Opt. Lett., 39, 6001-6004(2014).

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