• Microelectronics
  • Vol. 53, Issue 2, 350 (2023)
PAN Changkai1、2、3, WU Qiannan2、3、4, and LI Mengwei1、2、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.220203 Cite this Article
    PAN Changkai, WU Qiannan, LI Mengwei. Design of an L-Band Multilayer Low Group Delay Filter[J]. Microelectronics, 2023, 53(2): 350 Copy Citation Text show less

    Abstract

    An L-band multilayer low group delay filter is proposed to solve the problems of large volume, high group delay and large loss of current L-band filters. By selecting high silicon base as substrate material, a multilayer interfingering structure resonator was adopted to reduce in-band group delay and volume. HFSS software was used to implement modeling and simulating of the proposed filter. By adjusting the parameters of the resonator, the optimal design scheme was obtained. Simulation results show that the center frequency of the filter is 1.5 GHz, the in-band insertion loss is less than 1.2 dB, the in-band group delay fluctuation is less than 500 ps, and the out-of-band suppression at the center frequency around 0.3 GHz reaches 50 dB with a small size of 8 mm×7 mm×1.5 mm.
    PAN Changkai, WU Qiannan, LI Mengwei. Design of an L-Band Multilayer Low Group Delay Filter[J]. Microelectronics, 2023, 53(2): 350
    Download Citation