Ultra-flat dispersion in an integrated waveguide with five and six zero-dispersion wavelengths for mid-infrared photonics

Yuhao Guo; Zeinab Jafari; Lijuan Xu; Changjing Bao; Peicheng Liao; Guifang Li; Anuradha M. Agarwal; Lionel C. Kimerling; Jurgen Michel; Alan E. Willner; Lin Zhang

doi:10.1364/PRJ.7.001279

Journals >Photonics Research >Volume 7 >Issue 11 >Page 1279 > Article

Photonics Research
Vol. 7, Issue 11, 1279 (2019)

Ultra-flat dispersion in an integrated waveguide with five and six zero-dispersion wavelengths for mid-infrared photonics | Editors' Pick

Yuhao Guo¹, Zeinab Jafari^1、2, Lijuan Xu^1、3, Changjing Bao⁴, Peicheng Liao⁴, Guifang Li⁵, Anuradha M. Agarwal⁶, Lionel C. Kimerling⁶, Jurgen Michel⁶, Alan E. Willner⁴, and Lin Zhang^1、*

Author Affiliations

¹Key Laboratory of Opto-electronic Information Technical Science of Ministry of Education and Key Laboratory of Integrated Opto-electronic Technologies and Devices in Tianjin, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China

²School of Computer and Electrical Engineering, Shiraz University, Shiraz, Fars, Iran

³School of Electronic Engineering, Tianjin University of Technology and Education, Tianjin 300222, China

⁴Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA

⁵College of Optics and Photonics, CREOL and FPCE, University of Central Florida, Orlando, Florida 32816, USA

⁶Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

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DOI: 10.1364/PRJ.7.001279 Cite this Article Set citation alerts

Yuhao Guo, Zeinab Jafari, Lijuan Xu, Changjing Bao, Peicheng Liao, Guifang Li, Anuradha M. Agarwal, Lionel C. Kimerling, Jurgen Michel, Alan E. Willner, Lin Zhang. Ultra-flat dispersion in an integrated waveguide with five and six zero-dispersion wavelengths for mid-infrared photonics[J]. Photonics Research, 2019, 7(11): 1279 Copy Citation Text

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Fig. 1. Scheme for obtaining dispersion profile with more ZDWs. (a) The dispersion profile with another dip can introduce two more ZDWs. (b) The waveguide structure can generate the dispersion curve in (a), with one more slot layer added. (c) A slab beneath the waveguide core is introduced so that the guided mode extends to the slab more at a longer wavelength. (d) The proposed waveguide in this work.

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Fig. 2. Dispersion profiles of the guided mode over a wideband (a) for WG1 and (b) for WG2. Details of the dispersion are shown in the insets, individually.

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Fig. 3. Mode evolution in this waveguide. (a) Optical field distributions of the quasi-fundamental-TM mode in WG1 at 4, 5, 6, 7, and 8 μm, respectively. (b) Normalized optical field overlaps of a fixed mode located at 6 μm with other modes at 4, 5, 7, and 8 μm.

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Fig. 4. Dispersion profiles for WG2 with different structural parameters changed around the optimal values. (a) Different W, (b) different H1, (c) different H2, (d) different H3, (e) different H4, and (f) different H5.

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Fig. 5. Dispersion profiles of the waveguides with the six structural parameters randomly changed within a range of ±2.5% for 10 times to mimic the influence of fabrication errors (a) for WG1 and (b) for WG2.

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Fig. 6. Suggested waveguide fabrication process. (a) Thermal evaporation of GeSbS. (b) Spin-coating of photoresist. (c) UV exposure through photomask. (d) Photoresist development. (e) Thermal evaporation of GeSbSe, GeSbS, and GeSbSe. (f) Photoresist lift-off. (g) Thermal evaporation of GeSbS.

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Year	Material	ZDWs	Dispersion [ps/(nm·km)]	$λ$ (nm)	$Δ λ$ (nm)	Flatness ( ${nm}^{2} \cdot km / ps$ )
2011 [14]	${Si}_{3} N_{4} + {SiO}_{2}$ ^a	4	$- 32 t o - 11$	$1565 - 2100$	535	25.48
2012 [15]	$Si + {SiO}_{2}$	4	$- 22 t o + 20$	$1435 - 2102$	667	15.88
2012 [18]	$Si + Si$ −nc	4	$- 24 t o + 22$	$1527 - 2625$	1098	23.87
2012 [19]	${As}_{2} S_{3} + {SiO}_{2}$	4	$- 3 t o + 3$	$1685 - 2720$	1035	172.50
2013 [21]	$Si + Si$ −nc	4	$- 13 t o + 14$	$1810 - 2655$	845	31.30
2015 [22]	${Si}_{3} N_{4} + {SiO}_{2}$	4	$- 1 t o + 1$	$1137 - 1949$	682	341.00
2016 [24]	${TiO}_{2} + {Si}_{3} N_{4}$	4	$- 15.87 t o + 11.34$	$1520 - 2320$	800	29.40
2016 [24]	$Si + GeSbSe$	4	$- 4.7 t o + 5.7$	$1660 - 3290$	1630	156.73
2016 [39]	${Si}_{1 - x} {Ge}_{x}$	2	$0 t o + 14$	$3000 - 8000$	5000	357.14
2017 [40]	$Ge + Si$	2	$0 t o + 59$	$3840 - 7920$	4080	69.15
2018 [5]	$Ge + Si$	4	$- 16 t o + 32$	$3500 - 10,000$	6500	135.42
2018 [33]	${Si}_{0.6} {Ge}_{0.4} + Si$	2	$0 t o + 19$	$4500 - 7700$	3200	168.42
This work	$GeSbSe + GeSbS$	5	$- 0.15 t o + 0.35$	$4000 - 8000$	4000	8000.00
	$Si + {Al}_{2} O_{3} + {Si}_{3} N_{4}$	6	$- 3.6 t o + 5.1$	$2030 - 5030$	3000	344.87

Table 1. Comparison of Dispersion-Flattened Waveguides in Recent Works

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	1	2	3	4	5	6	7	8	9	10
$W$	2174	2185	2260	2184	2239	2087	2180	2155	2113	2228
$H_{1}$	727	728	717	723	711	735	695	728	704	713
$H_{2}$	469	453	436	440	448	459	435	423	434	454
$H_{3}$	2531	2521	2510	2550	2455	2647	2618	2583	2580	2533
$H_{4}$	724	720	696	740	726	714	720	715	690	715
$H_{5}$	2799	2720	2681	2822	2714	2689	2709	2672	2653	2902

Table 2. Values of the Six Structural Parameters Randomly Changed within a Range of

\pm 2.5 %

for 10 Times for WG1 (unit: nm)

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	1	2	3	4	5	6	7	8	9	10
$W$	889	849	870	869	860	859	880	895	864	870
$H_{1}$	248	247	247	249	245	244	249	246	240	242
$H_{2}$	49.7	49.1	48.1	48.9	49.4	48.3	48.5	51.2	50.2	49.5
$H_{3}$	626	638	653	664	636	647	626	646	650	638
$H_{4}$	850	861	896	871	845	853	847	875	850	856
$H_{5}$	578	570	591	589	568	588	581	581	573	579