• Photonics Research
  • Vol. 10, Issue 3, 834 (2022)
Feng Zhou1、2, Cacere Jelah Nieva2, Dianyuan Fan1, Shunbin Lu1、3、*, and Wei Ji1、2、4、*
Author Affiliations
  • 1SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen 518060, China
  • 2Department of Physics, National University of Singapore, Singapore 117542, Singapore
  • 3e-mail: shunbin_lu@szu.edu.cn
  • 4e-mail: phyjiwei@nus.edu.sg
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    DOI: 10.1364/PRJ.447029 Cite this Article Set citation alerts
    Feng Zhou, Cacere Jelah Nieva, Dianyuan Fan, Shunbin Lu, Wei Ji. Superior optical Kerr effects induced by two-dimensional excitons[J]. Photonics Research, 2022, 10(3): 834 Copy Citation Text show less

    Abstract

    Materials with strong optical Kerr effects (OKEs) are crucial for a broad range of applications, such as all-optical data processing and quantum information. However, the underlying OKE mechanism is not clear in 2D materials. Here, we reveal key insights of the OKE associated with 2D excitons. An admirably succinct formalism is derived for predicting the spectra and the magnitude of the nonlinear refractive index (n2) of 2D materials. The predicted n2 spectra are consistent with reported experimental data and exhibit pronounced excitonic resonances, which is distinctively different from bulk semiconductors. The n2 value is predicted to be 3×10-10 cm2/W for a 2D layered perovskite at low temperature as 7 K, which is four orders of magnitude larger than those of bulk semiconductors. The superior OKE induced by 2D excitons would give rise to a narrow refractive index-near-zero region for intense laser light. Furthermore, we demonstrate that the 2D layered perovskite should exhibit the best OKE efficiency (WFOM=1.02, TFOM=0.14) at 1550 nm, meeting the material requirements for all-optical switching. Our findings deepen the understanding of the OKE of 2D semiconducting materials and pave the way for highly efficient all-optical excitonic devices.
    n2(hυ)=chπ0+β(hυ,hυ)d(hυ)(hυ)2(hυ)2.

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    β(hυ)=C2(n02+2)4E2p2F2,exc(hυ),

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    n2(hυ)chC2π(n02+2)4E2p2×0E2p1(E2p2hυ)2+(hγ)2hυ(hυ)2(hυ)2d(hυ).

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    n2(hυ)=Z2(n02+2)4E2p2G(x),

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    G(x)=0.5x(0.5x)2+0.3(hγ/E2p)2,

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    n2(hυ)=Z2(n02+2)42E2p2[GA(x)+GB(x)].

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    β(hυ)=CNhυ(ElocE)4×[|μG1s|2(E1s_Ahυ)2+(Γ1s_A/2)2+|μG1s|2(E1s_Bhυ)2+(Γ1s_B/2)2]|Wnμ1snp|2Γnp/2π(Enp2hυ)2+(Γnp/2)2,(A1)

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    β(hυ)=CN(hγ)81π|W2|2|μG1s|2|μ1s2p|2(n02+2)4×[1(E1s_Ahυ)2+(hγA)2hυ(2hυE2p_A)2+(hγA)2+1(E1s_Bhυ)2+(hγB)2hυ(2hυE2p_B)2+(hγB)2],(A2)

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    β(hυ)=CN(hγ)81π|W2|2|μG1s|2|μ1s2p|2(n02+2)4×[1E2p_A2hυ(2hυE2p_A)2+(hγA)2+1E2p_B2hυ(2hυE2p_B)2+(hγB)2].(A3)

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    n2(hυ)=CN(ch2γ)81π2|W2|2|μG1s|2|μ1s2p|2(n02+2)4×+[1/E2p_A2(2hυE2p_A)2+(hγA)2+1/E2p_B2(2hυE2p_B)2+(hγB)2]×hυ(hυ)2(hυ)2d(hυ).(A4)

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    n2(hυ)=Z2(n02+2)4E2p2[GA(x)+GB(x)],(A5)

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    GA(x)=0.5x(0.5x)2+0.3(hγ/E2p)2,(A6)

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    GB(x)=Λδ2(10.5δx)(10.5δx)2+0.3δ2(Λhγ/E2p)2.(A7)

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    β(hυ)=CN(ch2γ)81π2|W2|2|μG1s|2|μ1s2p|2×(n02+2)4E2p2hυ(2hυE2p)2+(hγ)2.(B1)

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    n2(hυ)=Z2(n02+2)4E2p2G(x),(B2)

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    G(x)=0.5x(0.5x)2+0.3(hγ/E2p)2.(B3)

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    γ(T)=Γ0+σT+ΓLO(eωLO/kBT1)12h,(D1)

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    Feng Zhou, Cacere Jelah Nieva, Dianyuan Fan, Shunbin Lu, Wei Ji. Superior optical Kerr effects induced by two-dimensional excitons[J]. Photonics Research, 2022, 10(3): 834
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