Fig. 1. (Colour online) (a) A cross-section diagram of a GaN quasi-vertical SBD under experimentation. (b) Forward and reverse J–V characteristics at 300 K presented by logarithmic scale. Inset: forward J–V characteristics at 300 K in linear scale. (c) C–V characteristics at 300 K. Inset: 1/C²–V curve at 300 K.

Fig. 2. (Colour online) (a) Energy band diagrams of hole trap in GaN for (1) capture and (2) emission process. (b) Inverted temperature-scanning ODLTS spectra. (c) Arrhenius plot for hole trap H1. (d) Apparent trap concentration profile versus depletion region width.

Fig. 3. (Colour online) (a) Isothermal ODLTS spectra for scanning T_W with fixed U_R of −6 V and t_p of 1 s from 315 to 343 K. (b) τ_e derived by isothermal ODLTS at different temperatures. (c) Arrhenius plot of trap H1 extracted from temperature-dependent τ_e.

Fig. 4. (Colour online) (a) Electric-field-dependent τ_e of trap H1 extracted from capacitance transient spectra from 315 to 329 K. The ln(e_p) of trap H1 as a function of (b) E² and (c) E^1/2 from 315 to 329 K. Black dotted lines are linear fitting curves.

Fig. 5. (Colour online) (a) Normalized capacitance transient amplitude as a function of t_p. (b) Capacitance transient amplitude increases exponentially with t_p. (c) τ_c from 315 to 343 K.

Table 1. Comparison with other published comparable hole trap in n-GaN.