Optical Properties of SiNx Films Prepared by Microwave ECR-CVD

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] Y. Manabe, T. Mitsuyu. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method. J. Appl. Phys., 1989, 66(6): 2475～2480

[2] I. N. Mihailescu, V. Craciun, L. C. Nister et al.. Direct nitridation of a silicon surface by multipulse excimer laserir radiation in a nitrogen-containing ambientgas. J. Appl. Phys., 1991, 70(4): 2123～2131

[3] P. V. Bulkin, P. L. Swart, B. M. Lacquet. Electron cyclotron resonance plasma deposition of SiNx for optical applications. Thin Solid Film, 1994, 241: 247～250

[4] D. J. Stephens, S. S. He, G. Lucovsky et al.. Effects of thin film deposition rates, and process-induced interfacial layers on the optical properties of plasma-deposition SiO2/Si3N4 Bragg reflecters. J. Vac. Sci. and Technol., 1993, A11(4): 893～899

[5] J. Ahn, K. Suzuki. Stress-controlled silicon nitride film with high optical transmittance prepared by an ultrahigh-vacuum electron cyclotron resonance plasma chemical-vapor deposition system. Appl. Phys. Lett., 1994, 64(24): 3249～3251

[6] S. Garcia, J. M. Martin, I. Martil et al.. Optical characterization of silicon nitride films deposited by ECR-CVD. Vacuum, 1994, 45(1011): 1027～1028