SPINTRONICS, SPINTRONIC DEVICES AND ELECTRON-SPIN RELAXATION IN GaAs

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] Baibich M N , Broto J M, Fert A, et al. Giant magnetoresistance of (001) Fe/( 001 ) Cr magnetic superlattices [J].Phys. Rev. Lett, 1988, 61 (21): 2472-2475.

[2] Wolf S A , Awschalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future [J].Scicence, 2001,294:1488-1495.

[3] DiVincenzo D P. Quantum computation [J]. Science, 1995,270: 255-261.

[4] Bennett C H, DiVincenzo D P. Quantum information and computation[J]. Nature, 2000, 404: 247-255.

[5] Sarma S Das, Fabian Jaroslav, Hu Xuedong, et al. Spin electronics and spin computation [J]. Solid State communications, 2001, 119: 207-215.

[7] Kane B E. A silicon-based nuclear spin quantum computer[J]. Nature, 1998, 393: 133-137.

[8] Barnas J, Fuss A, Camley R E, et al. Novel magnetoresistance effect in layered magnetic structures: Theory and experiment[J]. Phys. Rev. B, 1990, 42: 8110.

[9] Prinz G A. Magnetoelectronics[J]. Science, 1998, 282:1660-1663.

[10] Parkin S S P, Mauri D. Spin engineering: Direct determination of the Ruderman-Kittel-Kasuya-Yosida far-field range function in ruthenium[J]. Phys. Rev. B, 1991, 44:7131-7134.

[11] Moodera J S, Kinder Lisa R, Wong Terrilyn M, et al.Large Magnetoresistance at room temperature in thin film tunnel junctions[J]. Phys. Rev. Lett. , 1994, 74: 3273-3276.

[12] Koh G H, Kim H J, Jeong W C, et al. Fabrication of high performance 64 kb MRAM[J]. J. of Magnetism and Magnetic Materials, 2004, 272-76: 1941-1942.

[13] Sugahara S, Tanaka M. A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain [J]. Appl. Phys. Lett. ,2004, 84 (13): 2307-2309.

[14] Hall K C, Lau W H, Gundogdu K, et al. Nonmagnetic semiconductor spin transistor[J]. Appl. Phys. Lett. 2003,83 (14): 2937-2939.

[15] Lampel Georges. Nuclear dynamic polarization by optical electronic saturation and optical pumping in semiconductors[J]. Phys. Rev. Lett., 1968, 20: 491-493.

[16] Ohno Y, Young D K, Beschoton B, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure[J]. Nature, 1999, 402: 790-792.

[17] Fleurov V, Kikoin K, Ivanov V A, et al. Mechanisms of double magnetic exchange in dilute magnetic semiconductors [J]. J. of Magnetism and Magnetic Materials, 2004,272-76: 1967-1968.

[18] Kikkawa J M, Awschalom D D. Lateral drag of spin coherence in gallium arsenide [J]. Nature, 1999, 397: 139-141.

[19] Kikkawa J M, Smorchkova I P, Samarth N, et al. Roomtemperature spin memory in two-dimensional electron gases[J]. Science, 1997, 277: 1284-1287.

[20] Gupta J A, Knobel R, Samarth N, et al. Ultrafast manipulation of electron spin coherence [J]. Science, 2001, 292 :2458-2460.

[21] Salis G, Kato Y, Ensslin K, et al. Electrical control of spin coherence in semiconductor nanostructures [J]. Nature, 2001,414: 619-622.

[22] Acremann Y, Buess M, Back C H, et al, Ultrafast generation of magnetic fields in a Schotty diode [J]. Nature,2001, 414: 51-54.

[23] Ganichev S D, Ivchenko E L, Danilov S N, et al. Conversion of spin into directed electric current in quantum wells[J]. Phys. Rev. Lett. , 2001, 86: 4358-4361.

[24] Kikkawa J M, Awschalom D D. Resonant spin amplification in n-type GaAs [J]. Phys. Rev. Lett., 1998, 80:4313-4316.