• Chinese Optics Letters
  • Vol. 19, Issue 3, 030005 (2021)
Sajid Hussain1, Ahmad Raza1, Fawad Saeed1, Abida Perveen1, Yan Sikhai1, Nasrud Din1, Elias E. Elemike2, Qianqian Huang1, Alagesan Subramanian1、*, Qasim Khan1、3、**, and Wei Lei1、***
Author Affiliations
  • 1Joint International Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
  • 2Chemistry Department, North West University, Mafikeng, South Africa
  • 3Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518000, China
  • show less
    DOI: 10.3788/COL202119.030005 Cite this Article Set citation alerts
    Sajid Hussain, Ahmad Raza, Fawad Saeed, Abida Perveen, Yan Sikhai, Nasrud Din, Elias E. Elemike, Qianqian Huang, Alagesan Subramanian, Qasim Khan, Wei Lei. Stable and high performance all-inorganic perovskite light-emitting diodes with anti-solvent treatment[J]. Chinese Optics Letters, 2021, 19(3): 030005 Copy Citation Text show less
    Scanning electron microscopy (SEM) images of perovskite films (a) without MA, (b) with dropped MA after delay of 5 s, and (c) treated with anti-solvent CB and MA.
    Fig. 1. Scanning electron microscopy (SEM) images of perovskite films (a) without MA, (b) with dropped MA after delay of 5 s, and (c) treated with anti-solvent CB and MA.
    (a) X-ray diffraction (XRD) patterns without MA/CsPbBr3, with MA/CsPbBr3, and with MA/CsPbBr3 treated with anti-solvent CB. (b) Normalized PL, (c) PL image only with MA-treated perovskite film, and (d) PL image of perovskite film treated with CB and MA.
    Fig. 2. (a) X-ray diffraction (XRD) patterns without MA/CsPbBr3, with MA/CsPbBr3, and with MA/CsPbBr3 treated with anti-solvent CB. (b) Normalized PL, (c) PL image only with MA-treated perovskite film, and (d) PL image of perovskite film treated with CB and MA.
    (a) Energy level diagram of the Pe-LEDs. (b) Schematic of device structure.
    Fig. 3. (a) Energy level diagram of the Pe-LEDs. (b) Schematic of device structure.
    Comparison results: (a) J-V, (b) luminance-V, (c) CE-V, and (d) EQE-V.
    Fig. 4. Comparison results: (a) J-V, (b) luminance-V, (c) CE-V, and (d) EQE-V.
    (a) Stability characteristics of different devices and (b) comparison between the HODs and EODs.
    Fig. 5. (a) Stability characteristics of different devices and (b) comparison between the HODs and EODs.
    Device No.StructureVT(V)Lmax (cd·m−2)CEmax (cd·A−1)EQEmax (%)
    1FTO/ZnO/CsPbBr3 (with/without MA)/poly-TPD/Au2.411,08835.65.7
    2FTO/ZnO/CsPbBr3 (with CB)/poly-TPD/Au2.412,62236.15.9
    3FTO/ZnO/CsPbBr3 (with MA)/poly-TPD/Au2.116,85540.47.1
    4FTO/ZnO/CsPbBr3 (with MA)-dropped CB/poly-TPD/Au2.017,86645.88.3
    Table 1. Characteristics of the Measured Pe-LED Devices
    Sajid Hussain, Ahmad Raza, Fawad Saeed, Abida Perveen, Yan Sikhai, Nasrud Din, Elias E. Elemike, Qianqian Huang, Alagesan Subramanian, Qasim Khan, Wei Lei. Stable and high performance all-inorganic perovskite light-emitting diodes with anti-solvent treatment[J]. Chinese Optics Letters, 2021, 19(3): 030005
    Download Citation