• Journal of Infrared and Millimeter Waves
  • Vol. 24, Issue 3, 185 (2005)
[in Chinese]1、2、3, [in Chinese]3, [in Chinese]3, and [in Chinese]4、5
Author Affiliations
  • 1[in Chinese]
  • 2226007
  • 3[in Chinese]
  • 4[in Chinese]
  • 5[in Chinese]
  • show less
    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. OPTICAL PROPERTIES AND EXCITON LOCALIZATION IN GaNAs/GaAs[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 185 Copy Citation Text show less
    References

    [1] Tu C W. Ⅲ-N-V low-bandgap nitrides and their device applications [J]. J. Phys: Condens. Matter, 2001,13:7169-7182.

    [2] Wei Su-Huai, Zunger Alex. Giant and composition-dependent optical bowing coefficient in GaAsN alloys [J] , Phys.Rev. Lett., 1996,76:664-667.

    [3] Gruning H, Chen L, Hartmann Th, et al. Optical Spectroscopic Studies of N-Related Bands in Ga ( N, As ) [J].Phys. Stat. Sol. B, 1999,215: 39-45.

    [4] Zhang Y, Mascarenhas A, Geisz J F, et al. Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1-x Nx [J]. Phys. Rev. B, 2001,63:085205

    [5] Buyanova I A, Chen W M, Monemar B. Electronic properties of Ga (In) NAs alloys [J]. MRS Internet J. Nitride Semicond. , 2001, Res. 6.2: 1-19.

    [6] Luo X D, Xu Z Y, Sun B Q, et al. Photoluminescence properties of GaN0.015 As0.985/GaAs single quantum well[J]. Appl. Phys. Lett. , 2001,79: 958-960.

    [7] Luo X D, Huang J S, Xu Z Y, et al. Alloy states in dilute GaAs1-xNx alloys (x《1%) [J]. Appl. Phys. Lett. 2003,82: 1697-1699.

    [8] Luo X D, Tan P H, Xu Z Y. Selectively excited photoluminescence of GaAs1-xNx single quantum wells [J]. J. Appl.Phys. , 2003, 94: 4863-4865.

    [9] Pan Z, Wang Y T, Li L H, et al. Strain relaxation of GaNxAs1-x on GaAs (001) grown by molecular-beam epitaxy[J]. J. Appl. Phys. , 1999,86: 5302-5304.

    [10] Francoeur S, Nikishin S A, Jin C, et al. Excitons bound to nitrogen clusters in GaAsN [J]. Appl. Phys. Lett.,1999,75: 1538-1540.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. OPTICAL PROPERTIES AND EXCITON LOCALIZATION IN GaNAs/GaAs[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 185
    Download Citation