Characteristics of L-band EDFA and its optimization design

Hai-feng FEI; Zhen-hong YU; Chang-jun JI

Journals >Chinese Journal of Quantum Electronics >Volume 25 >Issue 1 >Page 94 > Article

Chinese Journal of Quantum Electronics
Vol. 25, Issue 1, 94 (2008)

Characteristics of L-band EDFA and its optimization design

Hai-feng FEI^*, Zhen-hong YU, and Chang-jun JI

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[in Chinese]

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DOI: Cite this Article

FEI Hai-feng, YU Zhen-hong, JI Chang-jun. Characteristics of L-band EDFA and its optimization design[J]. Chinese Journal of Quantum Electronics, 2008, 25(1): 94 Copy Citation Text

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References

[1] Harun S W,Samsuri N MD,Ahmad H. Gain clamping in double-pass L-band EDFA using a ring resonator [J].Microwave and Optical Technology Lett.,2004,43(6): 484-486.

[4] Flood Felton A. L-band erbium-doped fiber amplifiers [C].Pro. of OFC'2000,2000,Paper WG 1-2.

[5] Wang J S,Vogel E M,Snitzer E. Tellurite glass: a new candidate for fiber devices [J].Optical Materials,1994,3:187-203.

[6] Akasaka Y,Morita I,Ho M C,et al. Characteristics of optical fibers for discrete Raman amplifiers [C].Proc.ECOC'99,1999,1: 288-289.

[7] Giles C R,Desurvire E. Modeling erbium-doped fiber amplifier [J].Lightwave Technal,1991,9(2): 271-283.

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FEI Hai-feng, YU Zhen-hong, JI Chang-jun. Characteristics of L-band EDFA and its optimization design[J]. Chinese Journal of Quantum Electronics, 2008, 25(1): 94

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