• Photonics Research
  • Vol. 6, Issue 5, 390 (2018)
Hongbo Lu1、2, Jian Xing1, Cheng Wei1, Jiangying Xia3, Junqing Sha1, Yunsheng Ding2, Guobing Zhang1、2, Kang Xie3, Longzhen Qiu1、2, and Zhijia Hu1、3、4、*
Author Affiliations
  • 1Key Laboratory of Special Display Technology, Ministry of Education, National Engineering Laboratory of Special Display Technology, State Key Laboratory of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
  • 2Key Laboratory of Advanced Functional Materials and Devices of Anhui Province, School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009, China
  • 3School of Instrument Science and Opto-Electronics Engineering, Hefei University of Technology, Hefei 230009, China
  • 4Aston Institute of Photonic Technologies, Aston University, Birmingham B4 7ET, UK
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    DOI: 10.1364/PRJ.6.000390 Cite this Article Set citation alerts
    Hongbo Lu, Jian Xing, Cheng Wei, Jiangying Xia, Junqing Sha, Yunsheng Ding, Guobing Zhang, Kang Xie, Longzhen Qiu, Zhijia Hu. Band-gap-tailored random laser[J]. Photonics Research, 2018, 6(5): 390 Copy Citation Text show less
    Schematic of the band-gap-tailored random laser.
    Fig. 1. Schematic of the band-gap-tailored random laser.
    Chemical structures of chiral agent S811, infrared absorbing material PBIBDF-BT, and laser dye PM597.
    Fig. 2. Chemical structures of chiral agent S811, infrared absorbing material PBIBDF-BT, and laser dye PM597.
    Experimental setup for the NIR controlling random laser.
    Fig. 3. Experimental setup for the NIR controlling random laser.
    (a) DSC curves of CLC-based S811 (30 wt.%) in E7 (70 wt.%) at heating/cooling rate of 1°C per minute; (b) LC textures recorded under crossed polarizers for the sample at 26°C and 30°C.
    Fig. 4. (a) DSC curves of CLC-based S811 (30 wt.%) in E7 (70 wt.%) at heating/cooling rate of 1°C per minute; (b) LC textures recorded under crossed polarizers for the sample at 26°C and 30°C.
    Transmission spectra of CLC as functions of (a) temperature and (b) irradiation time at 850 nm.
    Fig. 5. Transmission spectra of CLC as functions of (a) temperature and (b) irradiation time at 850 nm.
    Random lasing emission (a) for smectic A state at ∼0.35 mJ pump intensity, and (b) for cholesteric state at ∼3 μJ pump intensity; the relation between the output intensity and the pump intensity for (c) smectic A state and (d) cholesteric state.
    Fig. 6. Random lasing emission (a) for smectic A state at 0.35  mJ pump intensity, and (b) for cholesteric state at 3  μJ pump intensity; the relation between the output intensity and the pump intensity for (c) smectic A state and (d) cholesteric state.
    Random lasing spectra of LCs at the cholesteric state at different NIR (850-nm) irradiation times.
    Fig. 7. Random lasing spectra of LCs at the cholesteric state at different NIR (850-nm) irradiation times.
    Random laser wavelength changes with time (× represents three major laser peaks of the RL with NIR irradiation. * represents three major laser peaks of the RL without NIR light).
    Fig. 8. Random laser wavelength changes with time (× represents three major laser peaks of the RL with NIR irradiation. * represents three major laser peaks of the RL without NIR light).
    (a) Transmission spectra of CLC as a function of irradiation time of 940-nm NIR. (b) Bragg wavelength as a function of NIR irradiation time. (▪ 850-nm NIR irradiation on the sample; 940-nm NIR irradiation on the sample.)
    Fig. 9. (a) Transmission spectra of CLC as a function of irradiation time of 940-nm NIR. (b) Bragg wavelength as a function of NIR irradiation time. (▪ 850-nm NIR irradiation on the sample; 940-nm NIR irradiation on the sample.)
    Stable random lasing wavelength for (a) different NIR irradiation wavelengths and (b) different concentrations of infrared absorbing material at 850 nm for 30 min.
    Fig. 10. Stable random lasing wavelength for (a) different NIR irradiation wavelengths and (b) different concentrations of infrared absorbing material at 850 nm for 30 min.
    Stabilized wavelength of RLs changes with varying NIR irradiation power.
    Fig. 11. Stabilized wavelength of RLs changes with varying NIR irradiation power.
    Hongbo Lu, Jian Xing, Cheng Wei, Jiangying Xia, Junqing Sha, Yunsheng Ding, Guobing Zhang, Kang Xie, Longzhen Qiu, Zhijia Hu. Band-gap-tailored random laser[J]. Photonics Research, 2018, 6(5): 390
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