Shaojie Li, Peide Han. Effects of high temperature annealing and laser irradiation on activation rate of phosphorus[J]. Journal of Semiconductors, 2020, 41(12): 122701
- Journal of Semiconductors
- Vol. 41, Issue 12, 122701 (2020)
Fig. 1. The experimental steps.
Fig. 2. (a) The activation rate of phosphorus at different temperatures. (b) Areal density of phosphorus of ECV and SIMS before the junction depth at different temperatures. (c) Areal density of phosphorus of SIMS at different temperatures.
Fig. 3. (Color online) RBS images at different temperatures.
Fig. 4. (Color online) (a) ECV and SIMS measured results at 850 °C. (b) The activation rate with thickness at 850 °C.
Fig. 5. (Color online) Raman spectra of samples under different energy-flux densities.
Fig. 6. (a) The activation rate of phosphorus at different energy-flux densities. (b) Areal density of phosphorus of ECV and SIMS at different energy-flux densities.
Fig. 7. (Color online) (a) ECV test results at different laser irradiation conditions. (b) Effective activation rate with thickness at different laser irradiation conditions.
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