• Laser & Optoelectronics Progress
  • Vol. 51, Issue 8, 80401 (2014)
Liu Yi1、2、*, Zhou Qing1、2, and Yin Dayi1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop51.080401 Cite this Article Set citation alerts
    Liu Yi, Zhou Qing, Yin Dayi. Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon[J]. Laser & Optoelectronics Progress, 2014, 51(8): 80401 Copy Citation Text show less
    References

    [1] W F Kosonocky, J E Carnes, M G Kovac, et al.. Control of blooming in charge-couple imagers[J]. RCA Review, 1974, 35: 3-24.

    [2] Yasuo Ishihara, Eiji Oda, Hiroshi Tanigawa, et al.. Interline CCD image sensor with an antiblooming structure[J]. IEEE Transctions on Electron Devices, 1984, ED-31(1): 83-88.

    [3] Zhong Sicheng, Cheng Shunchang, Wang Xiaoqiang. Design and process of the CCD with anti-blooming structure[J]. Semiconductor Optoelectronics, 2011, 32(3): 313-316.

    [4] Pierre Magnan. Detection of visible photons in CCD and CMOS: a comparative view[J]. Nuclear Instruments and Methods in Physics Research A: Acclerators, Spectrometers, Detectors and Associated Equipment, 2003, 504(1-3): 199-212.

    [5] Jaroslav Hynecek. Electron-Hole recombination antiblooming for virtual-phase CCD imager[J]. IEEE Transactions on Electron Devices, 1983, ED-30(8): 941-948.

    [6] Wu Lifan. Research on and simulation of a CCD image sensor with a vertical anti-blooming structure[J]. Electronic Science and Technology, 2010, 23(8): 18-19, 24.

    [7] Thomas W McCrunin, Larry C Schooley, Gary R Sims. Signal processing for low-light-level, high-precision CCD imaging[C]. SPIE, 1991, 1448: 225-236.

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    [2] Gao Liuzheng, Zhao Minwei, Zhang Wei, Li Ying. Light Field on Silicon Substrate of Charge Coupled Device[J]. Acta Optica Sinica, 2016, 36(12): 1214004

    Liu Yi, Zhou Qing, Yin Dayi. Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon[J]. Laser & Optoelectronics Progress, 2014, 51(8): 80401
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