• Journal of Infrared and Millimeter Waves
  • Vol. 35, Issue 6, 672 (2016)
LIAO Yong-Ping1、2、*, ZHANG Yu1、2, YANG Cheng-Ao1、2, HUANG Shu-Shan1、2, CHAI Xiao-Li1、2, WANG Guo-Wei1、2, XU Ying-Qiang1、2, NI Hai-Qiao1、2, and NIU Zhi-Chuan1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2016.06.007 Cite this Article
    LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 672 Copy Citation Text show less
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    LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 672
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