High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm

LIAO Yong-Ping; ZHANG Yu; YANG Cheng-Ao; HUANG Shu-Shan; CHAI Xiao-Li; WANG Guo-Wei; XU Ying-Qiang; NI Hai-Qiao; NIU Zhi-Chuan

doi:10.11972/j.issn.1001-9014.2016.06.007

Journals >Journal of Infrared and Millimeter Waves >Volume 35 >Issue 6 >Page 672 > Article

Journal of Infrared and Millimeter Waves
Vol. 35, Issue 6, 672 (2016)

High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm

LIAO Yong-Ping^1、2、*, ZHANG Yu^1、2, YANG Cheng-Ao^1、2, HUANG Shu-Shan^1、2, CHAI Xiao-Li^1、2, WANG Guo-Wei^1、2, XU Ying-Qiang^1、2, NI Hai-Qiao^1、2, and NIU Zhi-Chuan^1、2

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¹[in Chinese]

²[in Chinese]

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DOI: 10.11972/j.issn.1001-9014.2016.06.007 Cite this Article

LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 672 Copy Citation Text

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Abstract

GaSb-based AlGaAsSb/InGaSb type-I quantum-wells (QW) 2 μm laser diodes (LDs) have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1.058 W under continuous wave (CW) operation at working temperature of 20℃. The maximum wall plug efficiency (WPE) was 20.2% and peak wavelength was 1.977 μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2.278 W.

Keywords

high power infrared laser diodes quantum wells

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