Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

Xixi XIONG; Xianglong YANG; Xiufang CHEN; Xiaomeng LI; Xuejian XIE; Guojie HU; Yan PENG; Guojian YU; Xiaobo HU; Yaohao WANG; Xiangang XU

doi:10.15541/jim20230325

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