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    Journals >Journal of Inorganic Materials >Volume 38 >Issue 11 >Page 1371 > Article
    • Journal of Inorganic Materials
    • Vol. 38, Issue 11, 1371 (2023)
    Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density
    Xixi XIONG1, Xianglong YANG1,*, Xiufang CHEN1,*, Xiaomeng LI1..., Xuejian XIE1, Guojie HU1, Yan PENG1, Guojian YU2, Xiaobo HU1, Yaohao WANG2 and Xiangang XU1|Show fewer author(s)
    Author Affiliations
  • 11. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 22. Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China
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    DOI: 10.15541/jim20230325 Cite this Article
    Xixi XIONG, Xianglong YANG, Xiufang CHEN, Xiaomeng LI, Xuejian XIE, Guojie HU, Yan PENG, Guojian YU, Xiaobo HU, Yaohao WANG, Xiangang XU. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371 Copy Citation Text show less
    8-inch conductive 4H-SiC single crystal substrate and corresponding BPD density distribution
    1. 8-inch conductive 4H-SiC single crystal substrate and corresponding BPD density distribution
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    Distribution of TSD density with 0.55 cm-2 and statistical distribution of TSD characteristic etch pits
    2. Distribution of TSD density with 0.55 cm-2 and statistical distribution of TSD characteristic etch pits
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    Abstract
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    Xixi XIONG, Xianglong YANG, Xiufang CHEN, Xiaomeng LI, Xuejian XIE, Guojie HU, Yan PENG, Guojian YU, Xiaobo HU, Yaohao WANG, Xiangang XU. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371
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