A New High Voltage SBD with Improved Buried Buffer Doped Structure

GAO Wenhao; SUN Qiming; RAN Qingyue; JIAN Peng; CHEN Wensuo

doi:10.13911/j.cnki.1004-3365.200204

Journals >Microelectronics >Volume 51 >Issue 1 >Page 116 > Article

Microelectronics
Vol. 51, Issue 1, 116 (2021)

A New High Voltage SBD with Improved Buried Buffer Doped Structure

GAO Wenhao, SUN Qiming, RAN Qingyue, JIAN Peng, and CHEN Wensuo

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[in Chinese]

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DOI: 10.13911/j.cnki.1004-3365.200204 Cite this Article

GAO Wenhao, SUN Qiming, RAN Qingyue, JIAN Peng, CHEN Wensuo. A New High Voltage SBD with Improved Buried Buffer Doped Structure[J]. Microelectronics, 2021, 51(1): 116 Copy Citation Text

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References

[1] SLASSI A, SOROKIN P B, PERSHIN A. ohmic/ Schottky barrier engineering in metal/SnP3 hetero structures ［J］. J Alloy & Compound, 2020, 831: 154800.

[2] CHEN W S, LIAO R J, ZENG Z, et al. Analyses and experiments of the Schottky contact super barrier rectifier (SSBR) ［J］. IEEE Elec Dev Lett, 2020, 38(2): 902-905.

[3] CHEN W S, ZHANG P J, ZHONG Y, et al. A novel low VF super barrier rectifier (SBR) with an N-enhancement layer ［J］. IEEE Elec Dev Lett, 2017, 38(2): 244-247.

[4] CHIU H C, CHI J F, KAO H L et al. The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment ［J］. Micoroelec Reliab, 2016, 59: 44-48.

GAO Wenhao, SUN Qiming, RAN Qingyue, JIAN Peng, CHEN Wensuo. A New High Voltage SBD with Improved Buried Buffer Doped Structure[J]. Microelectronics, 2021, 51(1): 116

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