A surface superjunction lateral insulated gate bipolar transistor (SSJ LIGBT) based on bulk silicon was proposed. In order to improve the device performance, the effects of the parameters, injection dose and energy， were analyzed. The structure and the termination of SSJ LIGBT were designed and optimized due to the requirement of withstand voltage. The breakdown characteristics, output characteristics and transfer characteristics of the SSJ LIGBT were tested. The test results showed that the SSJ LIGBT had a voltage resistance of 693 V and a specific on-resistance of only 6.45 Ω·mm2.