• Laser & Optoelectronics Progress
  • Vol. 58, Issue 15, 1516015 (2021)
Ting Chen and Renping Cao*
Author Affiliations
  • College of Mathematics and Physics, Jinggangshan University, Ji'an, Jiangxi 343009, China
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    DOI: 10.3788/LOP202158.1516015 Cite this Article Set citation alerts
    Ting Chen, Renping Cao. Advances in Bismuth Ion Luminescence[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516015 Copy Citation Text show less

    Abstract

    This paper mainly summarizes the luminescence properties of Bi ions in host materials such as phosphors, glasses, and crystals. Bi0 and Bi+ ions usually show near-infrared emission. Bi2+ ion emits red light in the range of 600‒800 nm. Bi3+ ion can show emission from the ultraviolet to red region due to the influence of crystal fields in different hosts. Bi5+ ion emits near-infrared light in the range of 1000‒1600 nm. Bi cluster ions can show emission from the near-infrared to mid-infrared region because of the influence of different valence state and hosts. The influence of crystal fields in different hosts on luminescence properties of Bi ions enriches the luminescence characteristics of Bi ions. The luminous mechanisms of Bi ions with different valence states are summed, which is helpful for the research and practical applications of new Bi ion doped luminescence materials.
    Ting Chen, Renping Cao. Advances in Bismuth Ion Luminescence[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516015
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